@ARTICLE{Hanada_Yoshitsugu_Silicon_2019, author={Hanada, Yoshitsugu and Xiao, Yang and Sonoda, Akio and Kang, Hyo-Gyoung and Nagayoshi, Hideaki and Yamamoto, Atsuo and Tokunaga, Tatsuya}, volume={vol. 64}, number={No 4}, journal={Archives of Metallurgy and Materials}, pages={1645-1652}, howpublished={online}, year={2019}, publisher={Institute of Metallurgy and Materials Science of Polish Academy of Sciences}, publisher={Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences}, abstract={Wider application of silicon carbide (SiC) is anticipated for increasing the durability of various structural facilities. For this study, SiC was fabricated with decreased electrical resistivity for precision electrical discharge machining. Two-step reaction sintering by infiltration of molten Fe-Si alloy was applied for SiC fabrication. The procedure included first sintering at 973 K in Ar gas atmosphere and second sintering by spontaneous infiltration of molten Fe-75%Si alloy at 1693 K in vacuum. The sintered structure porosity became very low, forming 3C-type SiC. Results confirmed that molten Fe-75%Si alloy infiltration occurred because of reaction sintering. The electrical resistivity of the sintered SiC infiltrated by molten Fe-75%Si alloy can be improved to be two orders of magnitude lower than that by molten Si, consequently maintaining the high performance of SiC.}, type={Article}, title={Silicon Carbide Fabrication by Infiltration of Molten Fe-Si Alloy Through Two-Step Reaction Sintering}, URL={http://czasopisma.pan.pl/Content/113627/PDF/AMM-2019-4-58-Hanada.pdf}, doi={10.24425/amm.2019.130139}, keywords={electrical resistivity, fracture toughness, iron silicide, molten metal infiltration, silicon carbide}, }