@ARTICLE{Piotrowski_T._Study_2015, author={Piotrowski, T. and Węgrzecki, M. and Stolarski, M. and Gościński, K. and Krajewski, T.}, volume={vol. 23}, number={No 4}, journal={Opto-Electronics Review}, pages={265-270}, howpublished={online}, year={2015}, publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology}, abstract={One of the key parameters determining detection properties of silicon PIN detector structures (p+-ν-n+ or n+-ν-p+) is minority carrier diffusion length in p-n junction regions p-n (p+-ν or n+-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ1 = 500 nm (silicon penetration depth of around 0.9 μm) and λ2 = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.}, type={Article}, title={Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures}, URL={http://czasopisma.pan.pl/Content/116149/PDF/opelre_2015_34.pdf}, keywords={effective minority diffusion length, surface recombination velocity, epiplanar detector, p-n structures}, }