TY - JOUR N2 - In this paper, of primary interest is to synthesis 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid (INSA) and to evaluate the main parameters of Au/INSA/n-Si/Al diode in dark and under illumination. Different techniques are used for interpreting the proposed INSA chemical structure. The dark current-voltage measurements were achieved in the temperature range of 293−413 K. It is noticed that INSA films modify the interfacial barrier height of classical Au/n-Si junction. At low applied voltages, the I–V relation shows exponential behavior. The values ideality factor, n, and the barrier height, φ, are improved by heating. The abnormal trend of n and φ is discussed, and a homogenous barrier height of 1.45 eV is evaluated. The series resistance is also calculated using Norde's function and it changes inversely with temperature. The space charge limited current ruled with exponential trap distribution dominates at relatively high potentials, trap concentration and carriers mobility are extracted. The reverse current of the diode has illumination intensity dependence with a good photosensitivity indicating that the device is promising for photodiode applications. L1 - http://czasopisma.pan.pl/Content/115272/PDF/opelre_2019_27_4_348-354.pdf L2 - http://czasopisma.pan.pl/Content/115272 PY - 2019 IS - No 4 EP - 354 KW - Azo compounds KW - Conduction mechanism KW - Diode parameters KW - Photodiodes A1 - Zedan, I.T. A1 - El-Menyawy, E.M. A1 - Nawar, H.H. PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 27 DA - 15.12.2019 T1 - Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode SP - 348 UR - http://czasopisma.pan.pl/dlibra/publication/edition/115272 T2 - Opto-Electronics Review ER -