Details Details PDF BIBTEX RIS Title Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications Journal title International Journal of Electronics and Telecommunications Yearbook 2019 Volume vol. 65 Issue No 4 Authors Birla, Shilpi Keywords FinFET ; RSNM ; WSNM ; Hold Margin ; Subthreshold ; Leakage Power Divisions of PAS Nauki Techniczne Coverage 603-609 Publisher Polish Academy of Sciences Committee of Electronics and Telecommunications Date 2019.11.03 Type Article Identifier DOI: 10.24425/ijet.2019.129819 Source International Journal of Electronics and Telecommunications; 2019; vol. 65; No 4; 603-609 <div class="test"></div>