Numerous technological applications use MEMS capacitive sensing technique as a major component, because of their ease of fabrication process, inexpensive and high sensitivity. The paper aims at modeling interdigitated capacitive (IDC) sensing. Virtually observe the contribution of variations in geometrical parameters to sensor efficiency and optimization factor. The sensor design is verified through ANSYS simulations. Results indicate “an efficient but poorly optimized sensor is better than a well-optimized sensor”. It is difficult to detect capacitance in the range of few pF generated using capacitive sensing. How it can be maximized with dimension optimization is focused in this paper.