We report on the status of long-wave infrared Auger suppressed HgCdTe multilayer structures grown on GaAs substrates designed for high operating temperature condition: 200-300 K exhibiting, detectivity -10¹¹ cmHz^1/2/W, time response within a –120 ps range at 230 K. Abnormal responsivity within the range of -30 A/W for electrical area 30×30 μm² under reverse bias V = 150 mV is reported. Maximum extraction coefficient of -2.3 was estimated for analysed structures.