Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by bias-selectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dual-band detectors was also improved. Finally, a 20 μm pitch 640 × 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.

This research describes effects of Si addition on microstructure and mechanical properties of the Al-Cr based alloys prepared manufactured using gas atomization and SPS (Spark Plasma Sintering) processes. The Al-Cr-Si bulks with high Cr and Si content were produced successfully using SPS sintering process without crack and obtained fully dense specimens close to nearly 100% T. D. (Theoretical Density). Microstructure of the as-atomized Al-Cr-Si alloys with high contents of Cr and Si was composed multi-phases with hard and thermally stable such as Al13Cr4Si4, AlCrSi, Al8Cr5 and Cr3Si intermetallic compounds. The average hardness values were 703 Hv for S5, 698 Hv for S10 and 824 Hv for S20 alloy. Enhancement of hardness value was resulted from the formation of the multi-intermetallic compound with hard and thermally stable and fine microstructure by the addition of high Cr and Si using rapid solidification and SPS process.