The publication addresses the dynamic state challenges encountered during development of a Dual Active Bridge (DAB) converter within DC microgrid systems. The conventional startup method is identified as instigating a cascade of unfavorable outcomes, encompassing elevated starting current, transformer current asymmetry, DC voltage distortions, EMI and heightened thermal stress on semiconductor components. Additionally, it necessitates precise calibration of magnetic components and diodes. A proposed remedy to these issues is introduced, involving a control method based on an additional phase shift to modulate the current of the primary H bridge. This novel control methodology is posited as a means to mitigate the aforementioned undesirable effects associated with traditional converter initiation techniques. The research also delves into considerations of proper design procedure for the converter. Emphasis is placed on integrating the novel control methodology into the design framework to effectively address challenges arising during transient states. Validation of the proposed solution is substantiated through a series of laboratory tests, the results of which are comprehensively presented in the article. These tests affirm the efficiency of the system when incorporating the novel control methodology, thereby substantiating its practical utility in mitigating the identified issues during the initiation phase of the DAB converter in DC microgrid systems.

The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.