The paper presents the results of research on commercial photovoltaic cells made of crystalline silicon. In particular, the focus was on the description of the elaborated by the authors measuring system with measurements methodology used for assessment of the influence of temperature on spectral characteristics of the tested cells, describing the dependence of the current sensitivity (spectral response, responsivity) and the external quantum efficiency on the wavelength of optical radiation. The investigations carried out in the proposed test system made it possible to evaluate the properties of the cells in the conditions similar to the operating conditions.

In the paper the problem of modelling thermal properties of semiconductor devices with the use of compact models is presented. This class of models is defined and their development over the past dozens of years is described. Possibilities of modelling thermal phenomena both in discrete semiconductor devices, monolithic integrated circuits, power modules and selected electronic circuits are presented. The problem of the usefulness range of compact thermal models in the analysis of electronic elements and circuits is discussed on the basis of investigations performed in Gdynia Maritime University.

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.