Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were

grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were

fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the

order of Jth ≈ 280 A/cm2 (for the resonator length L = 700 um) and differential efficiency η= 0.40 W/A (41%) from one

mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations

of above parameters, obtained by numerical modelling of devices were Jth ≈ 210 A/cm and η = 0.47 W/A from one mirror,

respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation

after 1500 hrs of CW operation at 35oC heat sink temperature at the constant optical power (50 mW) conditions.