The self-consistent optical-electrical-thermal-gain model of the oxide-confined edge-emitting diode laser has been used to simulate the room-temperature operation of the long-wavelength 1.3-µm quantum-dot (InGa)As/GaAs diode laser. The validityof the model has been verified using some experimental results for comparison. An impact of quantum-dot densityon laser operation characteristics as well as on temperature dependence of lasing threshold have been discussed.