Tytuł artykułu

Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

Tytuł czasopisma

International Journal of Electronics and Telecommunications

Rocznik

2010

Wolumin

vol. 56

Numer

No 3

Autorzy

Nisha Kondrath ; Kazimierczuk, Marian

Wydział PAN

Nauki Techniczne

Wydawca

Polish Academy of Sciences Committee of Electronics and Telecommunications

Data

2010

Identyfikator

DOI: 10.2478/v10177-010-0030-3 ; eISSN 2300-1933 (since 2013) ; ISSN 2081-8491 (until 2012)

Źródło

International Journal of Electronics and Telecommunications; 2010; vol. 56; No 3

Referencje

Abou-Alfotouh A. (2006), A 1 MHz hard switched silicon carbide DC/DC converter, IEEE Transactions on Power Electronics, 21, 4, 880. ; Bhatnagar M. (1993), Comparison of 6H-SiC, 3C-SiC, and Si for power devices, IEEE Transactions on Electronic Devices, 40, 3, 645. ; C. Carter, Jr. (1987), Growth of single crystal boules of 6H-SiC, null. ; J. Cooper, Jr (1997), Silicon Carbide - A review of fundamental questions are applications to current device technology. ; Ericsen T. (2002), Future navy application of wide bandgap power semiconductor devices, Proceedings of the IEEE, 90, 6, 1077. ; Garuda V. (1998), High temperature performance characterization of a buck converter using SiC and Si devices, null, 1561. ; Hefner A. (2001), SiC power diodes provide breakthrough performance for a wide range of applications, IEEE Transactions on Power Electronics, 16, 2, 273. ; Helfrick A. (1999), Investigations relative to the mitigation of interference to analog and digital radio-based avionics systems, null, 1. ; S. Hodge, Jr (2004), SiC Schottky diodes in power factor correction, Power Electronic Technology, 30, 8, 14. ; Ivanov P. (1995), Semiconductor silicon carbide - technology and devices: A review, Semiconductors, 29, 11, 1003. ; Baliga B. (1995), Power Semiconductor Devices. ; Jovanović M. (2005), State-of-the-art, single-phase, active power-factor-correction techniques for high-power applications - an overview, IEEE Transactions on Industrial Electronics, 52, 3, 701. ; Kazimierczuk M. (2008), Pulse-Width Modulated DC-DC Power Converters, doi.org/10.1002/9780470694640 ; Lebron-Velilla R. (2003), Silicon carbide diodes performance characterization and comparison with silicon devices, null. ; Linewih H. (2002), Design and application of SiC power MOSFET. ; McNutt T. (2007), Silicon carbide power MOSFET model and parameter extraction sequence, IEEE Transactions on Power Electronics, 22, 2, 353. ; Neudeck P. (2000), SiC Technology. ; Neudeck P. (1998), Non-micropipe dislocations in 4H-SiC devices: electrical properties and device technology implications, null, 107. ; Onda S. (1997), Silicon Carbide - A review of fundamental questions are applications to current device technology. ; Östling M. (1998), Recent advances in SiC materials and device technologies in Sweden, null, 46. ; Ozpineci B. (2002), Silicon carbide power device characterization for HEVs, null, 93. ; Ozpineci B. (2003), System level benefits of silicon carbide power devices in dcdc converters, null. ; Sarro P. (2000), Silicon carbide as a new MEMS technology, Sensors and Actuators A: Physical, 82, 1-3, 210. ; Scheick L. (2004), Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes, IEEE Transactions on Nuclear Science, 51, 6, 3193. ; Spiazzi G. (2003), Performance evaluation of a Schottky SiC power diode in a boost PFC application, IEEE Transactions on Power Electronics, 18, 6, 1249. ; Sriram S. (1997), Silicon Carbide - A review of fundamental questions are applications to current device technology. ; Tian Z. (2005), Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping, Journal of Electronic Materials, 34, 4, 430.