Details Details PDF BIBTEX RIS Title Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures Journal title Bulletin of the Polish Academy of Sciences Technical Sciences Yearbook 2016 Volume 64 Issue No 3 Authors Taube, A. ; Kosiel, K. ; Król, K. ; Guziewicz, M. ; Gołaszewska-Malec, K. ; Kruszka, R. ; Kamińska, E. ; Piotrowska, A. Divisions of PAS Nauki Techniczne Coverage 547-551 Date 2016 Identifier DOI: 10.1515/bpasts-2016-0061 ; ISSN 2300-1917 Source Bulletin of the Polish Academy of Sciences: Technical Sciences; 2016; 64; No 3; 547-551 References Tanner (2007), Electrical performance of Al gate dielectric films deposited by atomic layer deposition on, Let, 10, 203510. ; Robertson (2006), High dielectric constant gate oxides for metal oxide Si transistors, Prog Phys, 327, doi.org/10.1088/0034-4885/69/2/R02 ; Okamoto (2010), Improved inversion channel mobility in - SiC MOSFETs on Si face utilizing phosphorus - doped gate oxide, IEEE, 31, 710. ; Cheong (2007), Improved electronic performance of HfO / SiO stacking gate dielectric on SiC on, IEEE, 6, 3409. ; Seo (2009), and Conduction mechanism of leakage current due to the traps in ZrO thin film, Sci Technol, 24, 115016. ; Groner (2004), Low - temperature Al atomic layer deposition, Chem Mater, 16, 639, doi.org/10.1021/cm0304546 ; Cheong (2007), Analysis of current conduction mechanisms in atomic - layer - deposited Al gate on silicon carbide, Let, 90, 162113. ; Terman (1962), An investigation of surface states at a silicon / silicon oxide interface employing metal - oxide - silicon diodes Solid - State, Electron, 11, 285.