Title

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Journal title

Opto-Electronics Review

Yearbook

2016

Volume

vol. 24

Issue

No 2

Authors

Ściana, B. ; Badura, M. ; Dawidowski, W. ; Bielak, K. ; Radziewicz, D. ; Pucicki, D. ; Szyszka, A. ; Żelazna, K. ; Tłaczała, M.

Keywords

InGaAs/InP heterostructures ; silicon-doping ; InGaAs plasmon-contact layer ; quantum cascade lasers

Divisions of PAS

Nauki Techniczne

Coverage

95-102

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

21.04.2016

Type

Article

Identifier

ISSN 1896-3757

Source

Opto-Electronics Review; 2016; vol. 24; No 2; 95-102

Abstracting & Indexing

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ProQuest relevant databases
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ProQuesta (Ex Libris, Ulrich, Summon)
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