Details
Title
AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlatticesJournal title
Opto-Electronics ReviewYearbook
2015Volume
vol. 23Issue
No 1Authors
Keywords
InAs/AlSb/GaSb type−II SL structure ; HH−LH splitting ; N−structure ; DFT ; layer thickness effectDivisions of PAS
Nauki TechniczneCoverage
24-27Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
27.01.2015Type
ArticleIdentifier
ISSN 1896-3757Source
Opto-Electronics Review; 2015; vol. 23; No 1; 24-27Abstracting & Indexing
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