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Title

Evaluation of gate drive circuit effect in cascode GaN-based applications

Journal title

Bulletin of the Polish Academy of Sciences Technical Sciences

Yearbook

2021

Volume

69

Issue

2

Authors

Tan, Q.Y. ; Narayanan, E.M.S.

Affiliation

Tan, Q.Y. : Department of Electronic and Electrical Engineering, The University of Sheffield, S1 3JD, UK ; Narayanan, E.M.S. : Department of Electronic and Electrical Engineering, The University of Sheffield, S1 3JD, UK

Keywords

cascode GaNFETs ; parasitics ; buck-converter ; gate drive design

Divisions of PAS

Nauki Techniczne

Coverage

e136742

Bibliography

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  3.  H. Jain, S. Rajawat, and P. Agrawal, “Comparision of wide band gap semiconductors for power electronics applications”, 2008 Int. Conf. Recent Adv. Microw. Theory Appl. Microw, 2008, pp. 878–881.
  4.  S. Chowdhury, Z. Stum, Z. Da Li, K. Ueno, and T.P. Chow, “Comparison of 600 V Si, SiC and GaN power devices”, Mater. Sci. Forum 778–780, pp. 971–974 (2014).
  5.  A. Taube, M. Sochacki, J. Szmidt, E. Kamińska, and A. Piotrowska, “Modelling and Simulation of Normally-Off AlGaN/GaN MOS- HEMTs”, Int. J. Electron. Telecommun. 60(3), 253–258 (2014).
  6.  B.N. Pushpakaran, A.S. Subburaj, and S.B. Bayne, “Commercial GaN-Based Power Electronic Systems: A Review”, J. Electron. Mater. 49(11), 6247–6262 (2020).
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  8.  H. Jain, S. Rajawat, and P. Agrawal, Comparision of wide band gap semiconductors for power electronics applications, 2008.
  9.  H. Umeda et al., “High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches”, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, USA, 2018, pp. 894‒897, doi: 10.1109/APEC.2018.8341119.
  10.  K. Nowaszewski and A. Sikorski, “Predictive current control of three-phase matrix converter with GaN HEMT bidirectional switches”, Bull. Pol. Acad. Sci. Tech. Sci. 68(4), 1077–1085 (2020).
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  14.  Transphorm Inc., “Cascode vs. e-mode” [Online]. Available: https://www.transphormusa.com/en/gan-revolution/#casecode-vs-e-mode.  
  15. Transphrom Inc., “Design Resources” [Online]. Available: https://www.transphormusa.com/en/design-resources/#evaluation-kits. [Accessed: 20-Nov-2020].
  16.  Z. Liu, “Characterization and Application of Wide-Band- Gap Devices for High Frequency Power Conversion”, Ph.D. Thesis, Virginia Tech, 2017.
  17.  F.C. Lee and R. Burgos, “Characterization and Failure Mode Analysis of Cascode GaN HEMT Characterization and Failure Mode Analysis of Cascode GaN HEMT”, Ms.C. Thesis, Virginia Tech, 2014.
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  22.  Transphorm Inc., “TPH3205WSB 650 V GaN FET in TO-247 (source tab)”, 2017, [Online]. Available: https://www.transphormchina. com/en/document/650v-cascode-gan-fet-tph3205w/

Date

16.03.2021

Type

Article

Identifier

DOI: 10.24425/bpasts.2021.136742

Source

Bulletin of the Polish Academy of Sciences: Technical Sciences; 2021; 69; 2; e136742
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