Details

Title

TiAl-based Ohmic Contacts to p-type 4H-SiC

Journal title

International Journal of Electronics and Telecommunications

Yearbook

2021

Volume

vol. 67

Issue

No 3

Authors

Affiliation

Martychowiec, Agnieszka : Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland ; Kwietniewski, Norbert : Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland ; Kondracka, Kinga : Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland ; Werbowy, Aleksander : Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland ; Sochacki, Mariusz : Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland

Keywords

ohmic contact ; SiC ; silicon carbide ; TiAl

Divisions of PAS

Nauki Techniczne

Coverage

459-463

Publisher

Polish Academy of Sciences Committee of Electronics and Telecommunications

Bibliography

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[11] F. Roccaforte et al., “Metal/semiconductor contacts to silicon carbide: Physics and technology,” Mater. Sci. Forum, vol. 924 MSF, pp. 339–344, 2018. DOI: 10.4028/www.scientific.net/MSF.924.339.
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[15] M. Vivona, G. Greco, C. Bongiorno, R. Lo Nigro, S. Scalese, and F. Roccaforte, “Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC,” Appl. Surf. Sci., vol. 420, pp. 331–335, 2017. DOI: 10.1016/j.apsusc.2017.05.065.
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Date

2021.09.23

Type

Article

Identifier

DOI: 10.24425/ijet.2021.137834
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