Details Details PDF BIBTEX RIS Title Low Leakage and Robust Sub-threshold SRAM Cell Using Memristor Journal title International Journal of Electronics and Telecommunications Yearbook 2022 Volume vol. 68 Issue No 4 Authors Mustaqueem, Zeba ; Ansari, Abdul Quaiyum ; Akram, Md Waseem Affiliation Mustaqueem, Zeba : Jamia Milia Islamia Central University, India ; Ansari, Abdul Quaiyum : Jamia Milia Islamia Central University, India ; Akram, Md Waseem : Jamia Milia Islamia Central University, India Keywords 6T SRAM cell ; memristor ; power dissipation ; read and write operation ; leakage current ; stability ; non-volatile circuit Divisions of PAS Nauki Techniczne Coverage 667-676 Publisher Polish Academy of Sciences Committee of Electronics and Telecommunications Date 2022.12.19 Type Article Identifier DOI: 10.24425/ijet.2022.141287 <div class="test"></div>