Details
Title
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristicsJournal title
Opto-Electronics ReviewYearbook
2022Volume
30Issue
2Affiliation
Manyk, Tetiana : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Rutkowski, Jarosław : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Madejczyk, Paweł : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Gawron, Waldemar : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Gawron, Waldemar : VIGO System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland ; Martyniuk, Piotr : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, PolandAuthors
Keywords
HgCdTe ; MWIR detectors ; dark current ; I-V characteristics ; recombinationDivisions of PAS
Nauki TechniczneCoverage
e141596Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyBibliography
- Lawson, W. D., Nielson, S., Putley, E. H. & Young, A. S. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe. Phys. Chem. Solids 9, 325–329 (1959). https://doi.org/10.1016/0022-3697(59)90110-6
- Rogalski, A. HgCdTe infrared detector material: history, status and outlook. Prog. Phys. 68, 2267–2336 (2005). https://doi.org/10.1088/0034-4885/68/10/r01
- Hansen, G. L., Schmit, J. L. & Casselman, T. N. Energy gap versus alloy composition and temperature in Hg1-xCdx J. Appl. Phys. 53, 7099–7101 (1982). https://doi.org/10.1063/1.330018
- Harman, T. C. & Strauss, J. Band structure of HgSe and HgSe-HgTe alloys. Appl. Phys. 32, 2265–2270 (1961). https://doi.org/10.1063/1.1777057
- Martyniuk, P. & Rogalski, A. Performance comparison of barrier detectors and HgCdTe photodiodes. Eng. 53, 106105 (2014). https://doi.org/10.1117/1.OE.53.10.106105
- Rogalski, A. Infrared and Terahertz Detectors. (3rd) (CRC Press Taylor & Francis Group, 2020). https://doi.org/10.1201/b21951
- Lei, W., Antoszewski, J. & Faraone L. Progress, challenges, and opportunities for HgCdTe infrared materials and Detectors. Phys. Rev. 2, 041303 (2015). https://doi.org/10.1063/1.4936577
- Norton, P. HgCdTe infrared detectors. Opto-Electron. Rev. 10, 159–174 (2002). https://optor.wat.edu.pl/10(3)159.pdf
- Qiu, W. C., Jiang, T. & Cheng, X. A. A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector. Appl. Phys. 118, 124504 (2015). https://doi.org/10.1063/1.4931661
- Iakovleva, N. I. The study of dark currents in HgCdTe hetero-structure photodiodes. Commun. Technol. Electron. 66, 368–374 (2021). https://doi.org/10.1134/S1064226921030220
- Martyniuk, P. & Rogalski, A. HOT infrared photodetectors. Opto-Electron. Rev. 21, 240–258 (2013). https://doi.org/10.2478/s11772-013-0090-x
- Piotrowski, J. & Rogalski, A. Uncooled long wavelength infrared photon detectors. Infrared Phys. Technol. 46, 115–131 (2004). https://doi.org/10.1016/j.infrared.2004.03.016
- Elliott, C. T. Non-equilibrium mode of operation of narrow-gap semiconductor devices. Sci. Technol. 5, S30–S37 (1990). https://doi.org/10.1088/0268-1242/5/3S/008
- Maimon, S. & Wicks, G. nBn detector, an infrared detector with reduced dark current and higher operating temperature. Phys. Lett. 89, 151109 (2006). https://doi.org/10.1063/1.2360235
- Kopytko, M., Kębłowski , A., Gawron, W. & Pusz, LWIR HgCdTe barrier photodiode with Auger-suppression. Semicond. Sci. Technol. 31, 035025 (2016). https://doi.org/10.1088/0268-1242/31/3/035025
- He, J. et al. Design of a bandgap-engineered barrier-blocking HOT HgCdTe long-wavelength infrared avalanche photodiode. Express 28, 33556 (2020). https://doi.org/10.1364/OE.408526
- Gawron, W. et al. MOCVD Grown HgCdTe heterostructures for medium wave infrared detectors. Coatings 11, 611 (2021). https://doi.org/10.3390/coatings11050611
- Kębłowski, A. et al. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors. SPIE. 9819, 98191E-1 (2016). https://doi.org/10.1117/12.2229077
- APSYS Macro/User’s Manual ver. 2011. Crosslight Software, Inc. (2011).
- Capper, P. P. Properties of Narrow Gap Cadmium-Based Compounds. (INSPEC, the Institution of Electrical Engineers, 1994).
- Long, F. et al. The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells. Appl. Phys. 82, 3414–3421 (1997). https://doi.org/10.1063/1.365657
- Lopes, V. C., Syllaios, A. J. & Chen, M. C. Minority carrier lifetime in mercury cadmium telluride. Sci. Technol. 8, 824–841 (1993). https://doi.org/10.1088/0268-1242/8/6s/005
- Aleshkin, V.Y. et al. Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures. Appl. Phys. 129, 133106 (2021). https://doi.org/10.1063/5.0046983
- Reine, M. B. et al. HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays. Electron. 36, 1059–1067 (2007). https://doi.org/10.1007/s11664-007-0172-y
- Schuster, J. et al. Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression. Phys. Lett. 107, 023502 (2015). https://doi.org/10.1063/1.4926603
- Schacham, S. E. & Finkman, E. Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects. Appl. Phys. 57, 2001–2009 (1985). https://doi.org/10.1063/1.334386
- Zhu, L. et al. Temperature-dependent characteristics of HgCdTe mid-wave infrared e-avalanche photodiode. IEEE J. Sel. Top. Quantum Electron. 28, 3802709 (2022). https://doi.org/10.1109/JSTQE.2021.3121273
- Kopytko, M., Jóźwikowski, K., Martyniuk, P. & Rogalski, A. Photon recycling effect in small poxel p-i-n HgCdTe long wavelenght infrared photodiodes. Infrared Phys. Technol. 97, 38–42 (2019). https://doi.org/10.1016/j.infrared.2018.12.015
- Olson, B. V. et al. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices. Phys. Lett. 107, 261104 (2015). https://doi.org/10.1063/1.4939147
- Beattie, A. R. & Landsberg, P. Auger effect in semiconductors. Proc. Math. Phys. Eng. Sci. A249, 16−29 1959. https://doi.org/10.1098/rspa.1959.0003
- Krishnaumurthy, S. & Casselman, T. N. A detailed calculation of the Auger lifetime in p-type HgCdTe. Electron. Mater. 29, 828−831 (2000). https://doi.org/10.1007/s11664-000-0232-z