Szczegóły

Tytuł artykułu

Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers

Tytuł czasopisma

Opto-Electronics Review

Rocznik

2022

Wolumin

30

Numer

4

Afiliacje

Dąbrówka, Dominika : Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland ; Sarzała, Robert P. : Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland ; Wasiak, Michał : Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland ; Kafar, Anna : Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland ; Perlin, Piotr : Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland ; Saba, Kiran : Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland

Autorzy

Słowa kluczowe

GaN ; diode laser ; array with surface light emission ; thermal analysis

Wydział PAN

Nauki Techniczne

Zakres

e144115

Wydawca

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Bibliografia

  1. Warren, M. E. et al. High-speed and scalable high-power VCSEL arrays and their applications. SPIE 9381, (2015). https://doi.org/10.1117/12.2080235
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  3. Kuramoto, M. et al. High-power GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors. Sci. 9, 416 (2019). https://doi.org/10.3390/app9030416
  4. Kuramoto, M. et al.Watt-class blue vertical-cavity surface-emitting laser arrays. Phys. Express 12, 091004 (2019). https://doi.org/10.7567/1882-0786/ab3aa6
  5. Liu, J. et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photon. Technol. Lett. 29, 2203–2206 (2017). https://doi.org/10.1109/LPT.2017.2770169
  6. Perlin, P. et al. InGaN laser diode mini-arrays. Phys. Express 4, 062103 (2011). https://doi.org/10.1143/apex.4.062103
  7. Springthorpe, A. J. A novel double-heterostructure p-n junction Appl. Phys. Lett. 31, 524 (1977). https://doi.org/10.1063/1.89762
  8. Donnelly, J. P., Rauschenbach, K., Wang, C. A., Goodhue, W. D. & Bailey, R. J. Two-dimensional surface-emitting arrays of GaAs/AlgaAs diode lasers. SPIE 1043, Laser Diode Techno-logy and Applications (1989). https://doi.org/10.1117/12.976359
  9. Kim, J. H., Lang, R. J. & Larsson A. High‐power AlGaAs/GaAs single quantum well surface‐emitting lasers with integrated 45° beam deflectors. Phys. Lett. 57, 2048–2050 (1990). https://doi.org/10.1063/1.103937
  10. Śpiewak, P. et al. Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser bars. Sci. Technol. 32, 025008 (2017).
    https://doi.org/10.1088/1361-6641/aa513b
  11. Shackelford, J. F. & Alexander, W. CRC Materials Science and Engineering Handbook, Third Edition. (CRC Press, 2001).
    https://doi.org/10.1201/9781420038408
  12. Lide, D. R. CRC handbook of chemistry and physics: a ready-reference of chemical and physical data, 85th edition. Am. Chem. Soc. 127, 4542 (2004). https://doi.org/10.1021/ja041017a
  13. Kuc, M. & Sarzała, R. P. Modelowanie zjawisk fizycznych w krawędziowych laserach azotkowych oraz ich matrycach. (Wydawnictwo Politechniki Łódzkiej, 2016). [in Polish]
  14. Nakwaski, W. Thermal conductivity of binary, ternary, and quaternary III–V compounds. Appl/ Phys. 64, 159‒166 (1988). https://doi.org/10.1063/1.341449
  15. Sarzała, R. P., Śpiewak, P., Nakwaski, W. & Wasiak, M. Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures. Laser Technol. 132, 106482 (2020). https://doi.org/10.1016/j.optlastec.2020.106482
  16. Karbownik, P. & Sarzała, R. Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers. Opto-Electron. Rev. 16, 27–33 (2008).
    https://doi.org/10.2478/s11772-007-0035-3
  17. Tomczyk, A., Sarzała, R. P., Czyszanowski, T., Wasiak, M. & Nakwaski, W. Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers. Opto-Electron. Rev. 11, 65–75 (2003). https://www.infona.pl/resource/bwmeta1.element.baztech-article-BWA1-0002-0110
  18. Chung, D. D. L. Thermal interface materials. J. Mater. Eng. Perform. 10, 56–59 (2001). https://doi.org/10.1361/105994901770345358
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  20. Wengang, W. B., Haochung, H. K., Peicheng, K. & Shen, B. Handbook of GaN Semiconductor. 1st edition (CRC Press, 2017). https://doi.org/10.1201/9781315152011
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Data

16.12.2022

Typ

Article

Identyfikator

DOI: 10.24425/opelre.2022.144115 ; ISSN 1896-3757
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