Details
Title
Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasersJournal title
Opto-Electronics ReviewYearbook
2022Volume
30Issue
4Affiliation
Dąbrówka, Dominika : Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland ; Sarzała, Robert P. : Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland ; Wasiak, Michał : Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland ; Kafar, Anna : Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland ; Perlin, Piotr : Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland ; Saba, Kiran : Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, PolandAuthors
Keywords
GaN ; diode laser ; array with surface light emission ; thermal analysisDivisions of PAS
Nauki TechniczneCoverage
e144115Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyBibliography
- Warren, M. E. et al. High-speed and scalable high-power VCSEL arrays and their applications. SPIE 9381, (2015). https://doi.org/10.1117/12.2080235
- Huang, C. Y. Challenges and advancement of blue III-Nitride vertical-cavity surface-emitting lasers. Micromachines 12, 676 (2021). https://doi.org/10.3390/mi12060676
- Kuramoto, M. et al. High-power GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors. Sci. 9, 416 (2019). https://doi.org/10.3390/app9030416
- Kuramoto, M. et al.Watt-class blue vertical-cavity surface-emitting laser arrays. Phys. Express 12, 091004 (2019). https://doi.org/10.7567/1882-0786/ab3aa6
- Liu, J. et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photon. Technol. Lett. 29, 2203–2206 (2017). https://doi.org/10.1109/LPT.2017.2770169
- Perlin, P. et al. InGaN laser diode mini-arrays. Phys. Express 4, 062103 (2011). https://doi.org/10.1143/apex.4.062103
- Springthorpe, A. J. A novel double-heterostructure p-n junction Appl. Phys. Lett. 31, 524 (1977). https://doi.org/10.1063/1.89762
- Donnelly, J. P., Rauschenbach, K., Wang, C. A., Goodhue, W. D. & Bailey, R. J. Two-dimensional surface-emitting arrays of GaAs/AlgaAs diode lasers. SPIE 1043, Laser Diode Techno-logy and Applications (1989). https://doi.org/10.1117/12.976359
- Kim, J. H., Lang, R. J. & Larsson A. High‐power AlGaAs/GaAs single quantum well surface‐emitting lasers with integrated 45° beam deflectors. Phys. Lett. 57, 2048–2050 (1990). https://doi.org/10.1063/1.103937
- Śpiewak, P. et al. Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser bars. Sci. Technol. 32, 025008 (2017).
https://doi.org/10.1088/1361-6641/aa513b - Shackelford, J. F. & Alexander, W. CRC Materials Science and Engineering Handbook, Third Edition. (CRC Press, 2001).
https://doi.org/10.1201/9781420038408 - Lide, D. R. CRC handbook of chemistry and physics: a ready-reference of chemical and physical data, 85th edition. Am. Chem. Soc. 127, 4542 (2004). https://doi.org/10.1021/ja041017a
- Kuc, M. & Sarzała, R. P. Modelowanie zjawisk fizycznych w krawędziowych laserach azotkowych oraz ich matrycach. (Wydawnictwo Politechniki Łódzkiej, 2016). [in Polish]
- Nakwaski, W. Thermal conductivity of binary, ternary, and quaternary III–V compounds. Appl/ Phys. 64, 159‒166 (1988). https://doi.org/10.1063/1.341449
- Sarzała, R. P., Śpiewak, P., Nakwaski, W. & Wasiak, M. Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures. Laser Technol. 132, 106482 (2020). https://doi.org/10.1016/j.optlastec.2020.106482
- Karbownik, P. & Sarzała, R. Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers. Opto-Electron. Rev. 16, 27–33 (2008).
https://doi.org/10.2478/s11772-007-0035-3 - Tomczyk, A., Sarzała, R. P., Czyszanowski, T., Wasiak, M. & Nakwaski, W. Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers. Opto-Electron. Rev. 11, 65–75 (2003). https://www.infona.pl/resource/bwmeta1.element.baztech-article-BWA1-0002-0110
- Chung, D. D. L. Thermal interface materials. J. Mater. Eng. Perform. 10, 56–59 (2001). https://doi.org/10.1361/105994901770345358
- Khounsary, A. M., Chojnowski, D., Assoufid, L. & Worek, W. M. Thermal contact resistance across a copper-silicon interface. SPIE 3151, 45–51 (1997). https://doi.org/10.1117/12.294497
- Wengang, W. B., Haochung, H. K., Peicheng, K. & Shen, B. Handbook of GaN Semiconductor. 1st edition (CRC Press, 2017). https://doi.org/10.1201/9781315152011
- Adachi, A. Properties of Semiconductor Alloys: Group‐IV, III–V and II–VI Semiconductors. (John Wiley & Sons, Ltd., 2009). https://doi.org/10.1002/9780470744383