Details
Title
Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type regionJournal title
Opto-Electronics ReviewYearbook
2023Volume
31Issue
special issueAuthors
Affiliation
Durlin, Quentin : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Aliane, Abdelkader : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; André, Luc : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Kaya, Hacile : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Le Cocq, Mélanie : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Goudon, Valérie : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Vialle, Claire : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Veillerot, Marc : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Hartmann, Jean-Michel : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, FranceKeywords
Germanium (Ge) ; photodiode ; short-wave infrared detectorDivisions of PAS
Nauki TechniczneCoverage
e144550Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
24.02.2023Type
ArticleIdentifier
DOI: 10.24425/opelre.2023.144550Abstracting & Indexing
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