Details
Title
The growth and characterisation of type I GaSb/AlSb superlattice with a thin GaSb layerJournal title
Opto-Electronics ReviewYearbook
2023Volume
31Issue
4Authors
Affiliation
Fokt, Maciej : Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland ; Fokt, Maciej : Warsaw University of Technology, ul. Nowowiejska 15/19, 00-665 Warsaw, Poland ; Jasik , Agata : Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland ; Sankowska , Iwona : Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland ; Mączko , Herbert S. : nextnano GmbH, Konrad-Zuse-Platz 8, 81829 München, Germany ; Paradowska , Karolina M. : Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland ; Czuba, Krzysztof : Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland ; Czuba, Krzysztof : Warsaw University of Technology, ul. Nowowiejska 15/19, 00-665 Warsaw, PolandKeywords
Type I AlSb/GaSb superlattice ; 8-band k·p perturbation theory ; nextnano simulations ; AlSb layer degradationDivisions of PAS
Nauki TechniczneCoverage
e147912Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
15.10.2023Type
ArticleIdentifier
DOI: 10.24425/opelre.2023.147912Abstracting & Indexing
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