Details

Title

Investigations of free electrons in doped silicon crystals derived from Fourier transformed infrared measurements and ab initio calculations

Journal title

Opto-Electronics Review

Yearbook

2025

Volume

33

Issue

1

Authors

Affiliation

Andriyevsky, Bohdan : Faculty of Electronics and Computer Sciences, Koszalin University of Technology, ul. Śniadeckich 2, 75-453 Koszalin, Poland ; Bychto, Leszek : Faculty of Electronics and Computer Sciences, Koszalin University of Technology, ul. Śniadeckich 2, 75-453 Koszalin, Poland ; Patryn, Aleksy : Faculty of Electronics and Computer Sciences, Koszalin University of Technology, ul. Śniadeckich 2, 75-453 Koszalin, Poland ; Schade, Ulrich : Institute for Electronic Structure Dynamics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15, 12489 Berlin, Germany ; Puskar, Ljiljana : Institute for Electronic Structure Dynamics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15, 12489 Berlin, Germany ; Veber, Alexander : Institute for Electronic Structure Dynamics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15, 12489 Berlin, Germany ; Veber, Alexander : Department of Chemistry, Humboldt-Universität zu Berlin, Brook-Taylor-Strasse 2, 12489 Berlin, Germany ; Abrosimov, Nikolay : Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Strasse 2, 12489 Berlin, Germany ; Kashuba, Andrii I. : Department of General Physics, Lviv Polytechnic National University, 12 Stepan Bandera St., 79013 Lviv, Ukraine

Keywords

semiconductors ; doped silicon crystals ; far-infrared reflection spectra ; free electrons ; electron momentum scattering time ; effective mass of electron

Divisions of PAS

Nauki Techniczne

Coverage

e153756

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

27.01.2025

Type

Article

Identifier

DOI: 10.24425/opelre.2025.153756
×