Applied sciences

Opto-Electronics Review

Description

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing (without AI Algorithm Optimisation)
Plasmonics, nanooptics, and metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

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Journal Metrics:

JCR Impact Factor 2023:	1.3
5 Year Impact Factor 2022:	2
SCImago Journal Rank (SJR) 2023:	0.267
Source Normalized Impact per Paper (SNIP) 2023:	0.525
CiteScore 2023:	1.9
Ministry of Education and Science 2021*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Publishers

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

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Content

Opto-Electronics Review | 2023 | 31 | 2

1 Design and performance evaluation of vehicular visible light communication system under different weather conditions and system parameters

Eslam S. El-Mokadem , Nagwan I. Tawfik , Moustafa H. Aly , Walid S. El-Deeb

Opto-Electronics Review | 2023 | 31 | 2 | e145580 | DOI: 10.24425/opelre.2023.145580

Keywords: visible light communication beam divergence bit error rate vehicular communication laser diode

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Abstract

Vehicular visible light communication is an emerging technology that allows wireless communication between vehicles or between vehicles and infrastructure. In this paper, a vehicular visible light communication system is designed using a non-return to zero on-off keying modulation scheme under the effect of different weather conditions such as clear, haze, and fog. The first model is a light emitting diode-based system and the second is a laser diode-based system. For both models, the influence of system parameters such as beam divergence, transceiver aperture diameters, and receiver responsivity is studied. The impact of the use of the trans-impedance amplifier is also investigated for both models. It was concluded that in the presence of the amplifier, output power of the light emitting diode and laser diode model are increased by 98.46 µW and 0.4719 W, respectively. The performance of the two proposed models is evaluated through bit error rate, quality factor, eye diagram, and output power to have some insightful results about the quality of service for the two proposed models. Under a specific weather condition, the performance of the system would be critical and other techniques should be applied. The maximum achievable link distance for the laser-based and light-emitting diode-based systems is 190 m at a data rate of 25 Gbps and 80 m at a data rate of 60 kbps, respectively, under the same system parameters and weather conditions. The obtained results provide a full idea about the availability of constructing our proposed model in a practical environment, showing a higher performance of the laser diode-based model than that of the light emitting diode-based model.

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Authors and Affiliations

Eslam S. El-Mokadem

Nagwan I. Tawfik

e-mail:

ORCID:

Moustafa H. Aly

e-mail:

ORCID:

Walid S. El-Deeb

Department of Electronics and Communications Engineering, Higher Technological Institute, 10th of Ramadan City, Egypt
Arab Academy for Science, Technology and Maritime Transport, 1029 Alexandria, Egypt
Department of Electronics and Communications Engineering, Zagazig University, 44519 Zagazig, Egypt

2 Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications

Tetiana Manyk , Kinga Majkowycz , Jarosław Rutkowski , Piotr Martyniuk

Opto-Electronics Review | 2023 | 31 | 2 | e145093 | DOI: 10.24425/opelre.2023.145093

Keywords: IR detectors HgCdTe analanche photodiodes excess noise gain dual-band detectors

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Abstract

The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.

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Authors and Affiliations

Tetiana Manyk

e-mail:

ORCID:

Kinga Majkowycz

e-mail:

ORCID:

Jarosław Rutkowski

e-mail:

ORCID:

Piotr Martyniuk

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland

3 A probabilistic approach for approximation of optical and opto-electronic properties of an opto-semiconductor wafer under consideration of measuring inaccuracy and model uncertainty

Stefan M. Stroka , Christian Heumann , Fabian Suhrke , Kathrin Meindl

Opto-Electronics Review | 2023 | 31 | 2 | e145863 | DOI: 10.24425/opelre.2023.145863

Keywords: Gaussian process regression machine learning uncertainty quantification photoluminescence opto-semiconductor wafer measuring

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Abstract

This paper presents a probabilistic machine learning approach to approximate wavelength values for unmeasured positions on an opto-semiconductor wafer after epitaxy. Insufficient information about optical and opto-electronic properties may lead to undetected specification violations and, consequently, to yield loss or may cause product quality issues. Collection of information is restricted because physical measuring points are expensive and in practice samples are only drawn from 120 specific positions. The purpose of the study is to reduce the risk of uncertainties caused by sampling and measuring inaccuracy and provide reliable approximations. Therefore, a Gaussian process regression is proposed which can determine a point estimation considering measuring inaccuracy and further quantify estimation uncertainty. For evaluation, the proposed method is compared with radial basis function interpolation using wavelength measurement data of 6-inch InGaN wafers. Approximations of these models are evaluated with the root mean square error. Gaussian process regression with radial basis function kernel reaches a root mean square error of 0.814 nm averaged over all wafers. A slight improvement to 0.798 nm could be achieved by using a more complex kernel combination. However, this also leads to a seven times higher computational time. The method further provides probabilistic intervals based on means and dispersions for approximated positions.

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Authors and Affiliations

Stefan M. Stroka

1 2

e-mail:

ORCID:

Christian Heumann

e-mail:

ORCID:

Fabian Suhrke

Kathrin Meindl

Department of Statistics, Faculty of Mathematics, Informatics and Statistics, LMU Munich, 80539 Munich, Germany
ams-OSRAM International GmbH, 93055 Regensburg, Germany

4 Tris(8-hydroxyquinoline)aluminium in a polymer matrix as an active layer for green OLED applications

Małgorzata Sypniewska , Monika Pokladko-Kowar , Anna Kaczmarek-Kedziera , Iulia E. Brumboiu , Viviana Figà , Aleksandra Apostoluk , Peng Song , Junyan Liu , Robert Szczesny , Ewa Gondek , Beata Derkowska-Zielinska

Opto-Electronics Review | 2023 | 31 | 2 | e146105 | DOI: 10.24425/opelre.2023.146105

Keywords: tris(8-hydroxyquinoline)aluminium OLED photo- and electro-luminescence spectroscopic ellipsometry DFT calculation

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Abstract

Tris(8-hydroxyquinoline)aluminium with poly(N-vinylcarbazole) (Alq ₃:PVK) or polystyrene sulfonate (Alq ₃:PSS) were deposited by spin-coating on glass and silicon substrates. SEM measurements show that relatively smooth thin films were obtained. Fourier transform infrared measurements were performed to confirm the composition of the samples. The optical properties of thin films containing Alq ₃:PVK and Alq ₃:PSS were characterised using absorption spectroscopy and spectroscopic ellipsometry. It was found that the absorption spectrum of Alq ₃:PVK is characterised by four bands, while for Alq ₃:PSS only three bands are visible. The photoluminescence of the studied thin layers shows a peak with a maximum at about 500 nm. Additionally, cyclic voltammetry of Alq ₃ is also presented. Theoretical density functional theory calculations provide the insight into the interaction and nature of Alq ₃:PVK and Alq ₃:PSS excited states. Finally, the organic light-emitting diode (OLED) structure based on Alq ₃:PVK was fabricated and showed strong electro-luminescence with a green emission at 520 nm. The results of the device show that the ITO/PEDOT:PSS/Alq ₃:PVK/Ca/Al system can be useful for the production of low-cost OLEDs with Alq ₃:PVK as an active layer for future lighting applications.

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Authors and Affiliations

Małgorzata Sypniewska

e-mail:

ORCID:

Monika Pokladko-Kowar

e-mail:

ORCID:

Anna Kaczmarek-Kedziera

e-mail:

ORCID:

Iulia E. Brumboiu

e-mail:

ORCID:

Viviana Figà

e-mail:

ORCID:

Aleksandra Apostoluk

e-mail:

ORCID:

Peng Song

6 7

Junyan Liu

6 8

e-mail:

ORCID:

Robert Szczesny

e-mail:

ORCID:

Ewa Gondek

e-mail:

ORCID:

Beata Derkowska-Zielinska

e-mail:

ORCID:

Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Torun, Grudziądzka 5, Torun 87-100, Poland
Department of Physics, Cracow University of Technology, Podchorążych 1, 30-084 Krakow, Poland
Faculty of Chemistry, Nicolaus Copernicus University in Torun, Gagarina 7, Torun 87-100, Poland
Dipartimento di Scienze e Tecnologie Biologiche, Chimiche e Farmaceutiche, Università di Palermo, Viale delle Scienze, Parco d’Orleans II, 90128 Palermo, Italy
Université de Lyon, INSA Lyon, ECL, CNRS, UCBL, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France
State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150001, China
School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, 150001, China
Faculty of Chemistry, Nicolaus Copernicus University in Torun, Gagarina 7, Torun 87-100, Poland

5 1.28 Tbps DWDM optical network design using a dispersion compensating distributed Raman amplifier over S-band

Baseerat Gul , Faroze Ahmad

Opto-Electronics Review | 2023 | 31 | 2 | e146104 | DOI: 10.24425/opelre.2023.146104

Keywords: dense wavelength division multiplexing conventional single mode fibre optical signal to noise ratio stimulated Raman scattering S-band dispersion compensating fibre

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Abstract

A 100 km long dense wavelength division multiplexed optical network design with a capacity of 1.28 Tbps is proposed in this paper. The novelty of this work is the use of a dispersion compensating fibre as a Raman amplifier in the S-band for a high-capacity dense wavelength division multiplexing network. The transmission is accomplished auspiciously in the wavelength range from 196 THz to 202. 35THz. The coupling of a Raman amplifier made the realisation of the S-band possible in the network, as the erbium-doped fibre amplifier is competent for amplification in C- and L-bands only. Further, a pump coupler is used for multiple pumping to enlarge the gain spectrum for a high-capacity optical network. The performance analysis of the network is carried out systematically in terms of bit error rate (BER), eye diagram, Q-factor, and optical signal to noise ratio (OSNR). The results demonstrate that the proposed set-up shows adequately low BER, sufficient Q-factor values, wide eye-opening, and commendable OSNR for all receiving channels.

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Authors and Affiliations

Baseerat Gul

e-mail:

ORCID:

Faroze Ahmad

e-mail:

ORCID:

Department of Electronics and Communication Engineering, Islamic University of Science and Technology, Kashmir, India

6 TERFEL Special Section - table of contents
(International Conference on Free Electrons Laser Applications in Infrared and THz Studies of New States of Matter)

Opto-Electronics Review | 2023 | 31 | 2

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7 Magnetospectroscopy of CdTe/Cd _1-xMg _xTe modulation-doped quantum wells in THz and visible range

Jerzy Łusakowski , Maciej Zaremba , Adam Siemaszko , Krzysztof Karpierz , Zbigniew Adamus , Tomasz Wojtowicz

Opto-Electronics Review | 2023 | 31 | 2 | e144597 | DOI: 10.24425/opelre.2023.144597

Keywords: terahertz spectroscopy optically detected cyclotron resonance modulation-doped CdTe quantum wells

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Abstract

Transport, photoluminescence, THz transmission, and optically detected cyclotron resonance studies were carried out on samples with a single modulation-doped CdTe/Cd _1-xMg _xTe quantum well. THz experiments were performed at liquid helium temperatures for photon energies between about 0.5 meV and 3.5 meV. An effective mass of electron was determined to be (0.1020±0.0003)m ₀. Observed photoluminescence and optically detected cyclotron resonance spectra cannot be explained within the simple model of Landau quantization of parabolic bands.

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Authors and Affiliations

Jerzy Łusakowski

e-mail:

ORCID:

Maciej Zaremba

Adam Siemaszko

Krzysztof Karpierz

Zbigniew Adamus

2 3

e-mail:

ORCID:

Tomasz Wojtowicz

e-mail:

ORCID:

Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland

8 Terahertz dielectric characterisation of fibres in a time-domain spectrometer

Adam Pacewicz , Paweł Kopyt , Jerzy Cuper , Mateusz Krysicki , Bartłomiej Salski

Opto-Electronics Review | 2023 | 31 | 2 | e144596 | DOI: 10.24425/opelre.2023.144596

Keywords: terahertz spectroscopy fibre characterisation dielectric materials

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Abstract

An innovative measurement setup for the dielectric characterisation of fibres in a terahertz time-domain spectrometer using an HDPE elliptical lens for coupling into the fibres has been built and validated by measurements of several different types of samples. The setup is based on a commercial all fibre-coupled terahertz time-domain spectrometer. Measurements of the effective refractive index have been conducted on polypropylene-based three-dimensional printing filaments, silica glass rods, and a polytetrafluoroethylene cord of lowered density, covering the frequency range of approximately 100 GHz to 1 THz. The theoretical part of the work includes numerical calculations performed via the finite difference eigenmode method and the characteristic equations of a uniform circular dielectric waveguide for a few guided modes, from which it is clear that primarily the fundamental mode propagates along the fibre. Details on model-based phase corrections, crucial to the accurate determination of the effective refractive index of dispersive fibres, have been presented as well.

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Authors and Affiliations

Adam Pacewicz

e-mail:

ORCID:

Paweł Kopyt

e-mail:

ORCID:

Jerzy Cuper

e-mail:

ORCID:

Mateusz Krysicki

e-mail:

ORCID:

Bartłomiej Salski

e-mail:

ORCID:

Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warsaw, Poland

9 Compact terahertz devices based on silicon in CMOS and BiCMOS technologies

Dmytro B. But , Alexander V. Chernyadiev , Kęstutis Ikamas , Cezary Kołaciński , Anastasiya Krysl , Hartmut G. Roskos , Wojciech Knap , Alvydas Lisauskas

Opto-Electronics Review | 2023 | 31 | 2 | e144599 | DOI: 10.24425/opelre.2023.144599

Keywords: terahertz teraFET CMOS THz emitter THz detectors

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Abstract

This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW\Hz ^1/2 and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.

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Authors and Affiliations

Dmytro B. But

1 2

e-mail:

ORCID:

Alexander V. Chernyadiev

e-mail:

ORCID:

Kęstutis Ikamas

3 4

e-mail:

ORCID:

Cezary Kołaciński

1 5

e-mail:

ORCID:

Anastasiya Krysl

Hartmut G. Roskos

e-mail:

ORCID:

Wojciech Knap

e-mail:

ORCID:

Alvydas Lisauskas

1 3

e-mail:

ORCID:

CENTERA, Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
NOMATEN Centre of Excellence, National Centre of Nuclear Research, A. Soltana 7, 05-400 Otwock-Świerk, Poland
Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio Av. 9, LT-10222 Vilnius, Lithuania
General Jonas Žemaitis Military Academy of Lithuania, Šilo Av. 5A, LT-10322 Vilnius, Lithuania
Łukasiewicz Research Network Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland
Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, D60435 Frankfurt, Germany

10 Selected issues concerning the influence of irradiation on the characteristics of superconducting elements in modern FELs facilities

Jacek Sosnowski

Opto-Electronics Review | 2023 | 31 | 2 | e144598 | DOI: 10.24425/opelre.2023.144598

Keywords: irradiation effects superconductors critical current nano-sized defects PolFEL accelerator

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Abstract

This paper discusses issues of using superconductors in modern accelerators, such as free-electron laser type, in a radioactive environment. It shows how irradiation damages the subtle structure of superconducting materials, especially 1D and 2D high-temperature superconductors, in which it leads to the creation of nano-sized columnar-type defects. The influence of the radiation-induced structural defects on the current-carrying properties of the superconducting materials is investigated according to a developed energetic description of the capturing process on these defects, acting as pinning centres of magnetic pancake vortices. Various initial positions of the captured vortices are analysed. The influence of the irradiation-induced defects on the current-voltage characteristics is investigated, and the maximum current density is determined as a function of irradiation intensity and such physical parameters as magnetic field, temperature, and nano-defect size. This analysis is therefore of scientific interest and should also be helpful in determining the proper operating conditions of solenoids and other superconducting elements in free-electron laser facilities.

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Authors and Affiliations

Jacek Sosnowski

e-mail:

ORCID:

National Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Świerk, Poland

11 Terahertz response of CdTe/Cd _1-xMg _xTe modulation-doped multiple quantum wells

Jerzy Łusakowski , Andrzej Frączak , Mikołaj Grymuza , Eryk Imos , Adam Siemaszko , Wiktoria Solarska , Aniela Woyciechowska , Maciej Zaremba , Rafał Zdunek , Krzysztof Karpierz , Zbigniew Adamus , Tomasz Słupiński , Tomasz Wojtowicz

Opto-Electronics Review | 2023 | 31 | 2 | e144600 | DOI: 10.24425/opelre.2023.144600

Keywords: terahertz spectroscopy Shubnikov-de Haas oscillations modulation-doped multiple CdTe-based quantum wells

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Abstract

Terahertz (THz) transmission, photoresistance, and electrical conductivity experiments were carried out at 4.2 K on a sample with modulation-doped CdTe/Cd _1-xMg _xTe multiple quantum wells. The measurements were carried out as a function of a magnetic field B up to 9 T and a radiation frequency between 0.1 and 0.66 THz. A broad minimum in the transmission curve was observed at magnetic fields corresponding to the cyclotron resonance at given THz frequency which was followed at larger fields by an oscillatory signal, periodic in B ⁻¹. Shubnikov-de Haas oscillations were observed in magnetoconductivity and in photoresistance. Each of these experimental signals revealed the same electron concentration equal to (1.01 ± 0.03) ∙1012 cm ⁻². THz spectroscopy results are compared with data obtained on a single quantum well and are discussed from the point of view of using such multiple quantum wells as THz optical elements.

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Authors and Affiliations

Jerzy Łusakowski

1 2

e-mail:

ORCID:

Andrzej Frączak

Mikołaj Grymuza

Eryk Imos

Adam Siemaszko

Wiktoria Solarska

Aniela Woyciechowska

Maciej Zaremba

Rafał Zdunek

Krzysztof Karpierz

Zbigniew Adamus

3 4

e-mail:

ORCID:

Tomasz Słupiński

3 4

e-mail:

ORCID:

Tomasz Wojtowicz

e-mail:

ORCID:

Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
Institute of Physics,Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland

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https://www.editorialsystem.com/opelre/journal/for_authors/

OPTO-ELECTRONICS REVIEW is an open access journal. This involves the payment of an article publishing charge (APC) by the authors, their institution or funding body. We make the article freely available immediately upon publication on PAS Jornals platform (https://journals.pan.pl/opelre)

As of July 1st, 2024, there are changes in the fees for open access publications in Opto-Electronics Review: 2000 PLN (500 EUR) - up to 8 pages of the journal format and mandatory over-length charges of 200 PLN (50 EUR) per page (see the above link with instructions for Authors for details)

Articles submitted by June 30th, 2024: existing fee: 1750 PLN (or 400 EUR)

Articles submitted from July 1st, 2024: new fee: 2000 PLN (or 500 EUR) - a flat fee per paper up to 8 pages of the journal format (each additional page will be charged an additional 200 PLN or 50 EUR).

Additional info

barwy Rzeczypospolitej Polskiej i wizerunek godła Rzeczypospolitej Polskiej

DOFINANSOWANO ZE ŚRODKÓW BUDŻETU PAŃSTWA
Rozwój czasopism naukowych
Nr projektu: RCN/SN/0652/2021/1
Dofinansowanie: 85 700 zł
Całkowita wartość: 85 700 zł
Data podpisania umowy: 6 grudnia 2022 r.
Celem projektu jest wsparcie działalności wydawniczej Opto-Electronics Review w zakresie poprawy widoczności czasopisma na arenie krajowej i międzynarodowej oraz podwyższenia jakości edytorskiej prezentowanych treści.

CO-FINANCED FROM THE STATE BUDGET
Development of scientific journals
Project number: RCN/SN/0652/2021/1
Funding: PLN 85,700
Total value: PLN 85,700
Date of signing the contract: December 6, 2022.
The project aims to support the publishing activities of Opto-Electronics Review to improve the journal's visibility in the national and international arena and increase the editorial quality of the presented content.

Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encouraged. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded.

Articles are published in OPELRE in the following categories:

-invited reviews presenting the current state of the knowledge,

-specialized topics at the forefront of optoelectronics and photonics and their applications,

-refereed research contributions reporting on original scientific or technological achievements,

-conference papers printed in normal issues as invited or contributed papers.

Authors of review papers are encouraged to write articles of relevance to a wide readership including both those established in this field of research and non-specialists working in related areas. Papers considered as “letters” are not published in OPELRE.

Opto-Electronics Review is published quarterly as a journal of the Association of Polish Electrical Engineers (SEP) and Polish Academy of Sciences (PAS) in cooperation with the Military University of Technology and under the auspices of the Polish Optoelectronics Committee of SEP.

Abstracting and Indexing:

Arianta

BazTech

EBSCO relevant databases

EBSCO Discovery Service

SCOPUS relevant databases

ProQuest relevant databases

Clarivate Analytics relevant databases

WangFang

additionally:

ProQuesta (Ex Libris, Ulrich, Summon)

Google Scholar

Policies and ethics:

The editors of the journal place particular emphasis on compliance with the following principles:

Ethical policy of Opto-Electronics Review

The ethical policy of Opto-Electronics Review follows the European Code of Conduct for Research Integrity and is also guided by the core practices and policies outlined by the Committee on Publication Ethics (COPE).

Authors must be honest in presenting their results and conclusions of their research. Research misconduct is harmful for knowledge.

Research results

Fabrication, falsification, or selective reporting of data with the intent to mislead or deceive is unethical, as is the theft of data or research results from others. The results of research should be recorded and maintained to allow for analysis and review. Following publication, the data should be retained for a reasonable period and made available upon request. Exceptions may be appropriate in certain circumstances to preserve privacy, to assure patent protection, or for similar reasons.

Authorship

All those who have made a significant contribution should be given chance to be cited as authors. Other individuals who have contributed to the work should be acknowledged. Articles should include a full list of the current institutional affiliations of all authors, both academic and corporate.

Competing interests

All authors, referees and editors must declare any conflicting or competing interests relating to a given article. Competing interests through their potential influence on behavior or content or perception may undermine the objectivity, integrity, or perceived value of publication.

Peer Review

We are committed to prompt evaluation and publication of fully accepted papers in Opto-Electronics Review’s publications. To maintain a high-quality publication, all submissions undergo a rigorous review process.

Characteristics of the peer review process are as follows:

• Simultaneous submissions of the same manuscript to different journals will not be tolerated.

• Manuscripts with contents outside the scope will not be considered for review.

• Opto-Electronics Review is a single-blind review journal.

• Papers will be refereed by at least 2 experts as suggested by the editorial board.

• In addition, Editors will have the option of seeking additional reviews when needed. Authors will be informed when Editors decide further review is required.

• All publication decisions are made by the journal’s Editor-in-Chief based on the referees’ reports. Authors of papers that are not accepted are notified promptly.

• All submitted manuscripts are treated as confidential documents. We expect reviewers to treat manuscripts as confidential material.

• Editors and reviewers involved in the review process should disclose conflicts of interest resulting from direct competitive, collaborative, or other relationships with any of the authors, and remove oneself from cases in which such conflicts preclude an objective evaluation. Privileged information or ideas that are obtained through peer review must not be used for competitive gain.

• A reviewer should be alert to potential ethical issues in the paper and should bring these to the attention of the editor, including any substantial similarity or overlap between the manuscript under consideration and any other published paper of which the reviewer has personal knowledge. Any statement, observation, derivation, or argument that had been previously reported should be accompanied by the relevant citation.

• Personal criticism is inappropriate.

Plagiarism

Reproducing text from other papers without properly crediting the source (plagiarism) or producing many papers with almost the same content by the same authors (self-plagiarism) is not acceptable. Submitting the same results to more than one journal concurrently is unethical. Exceptions are the review articles. Authors may not present results obtained by others as if they were their own. Authors should acknowledge the work of others used in their research and cite publications that have influenced the direction and course of their study.

Plagiarism is not tolerated. All manuscripts submitted to Opto-Electronics Review will be checked for plagiarism (copying text or results from other sources) and self-plagiarism (duplicating substantial parts of authors’ own published work without giving the appropriate references) using the CrossCheck database (iThenticate plagiarism checker).

Duplicate submission

Simultaneous submissions of the same manuscript to different journals will not be tolerated. The submitted article will be removed without consideration.

Corrections and retractions

All authors have an obligation to inform and cooperate with journal editors to provide prompt retractions or correction of errors in published works.

• The journal will issue retractions if:

• There is clear evidence that the findings are unreliable, either as a result of misconduct (e.g., data fabrication or honest error - miscalculation or experimental error);

• The findings have previously been published elsewhere without proper cross-referencing, permission or justification (i.e., cases of redundant publication);

• It constitutes plagiarism;

• It reports unethical research.

• The journal will issue errata, if:

• A small portion of an otherwise reliable publication proves to be misleading (especially because of honest error);

• The author list is incorrect.

Other forms of misconduct include failure to meet clear ethical and legal requirements such as misrepresentation of interests, breach of confidentiality, lack of informed consent and abuse of research subjects or materials. Misconduct also includes improper dealing with infringements, such as attempts to cover up misconduct and reprisals on whistleblowers.

The primary responsibility for handling research misconduct is in the hands of those who employ the researchers. If a possible misconduct is brought to our attention, we will seek advice from the referees and the Editorial Board. If there is the evidence, we will resolve the matter by appropriate corrections in the printed and online journal; by refusing to consider an author's future work and by contacting affected authors and editors of other journals.

Human and Animal Rights

If the work involves the use of human subjects, the author should ensure that the work described has been carried out in accordance with The Code of Ethics of the World Medical Association (Declaration of Helsinki) for experiments involving humans; Uniform Requirements for manuscripts submitted to Biomedical journals. Authors should include a statement in the manuscript that informed consent was obtained for experimentation with human subjects. The privacy rights of human subjects must always be observed.

All animal experiments should comply with the ARRIVE guidelines and should be carried out in accordance with the EU Directive 2010/63/EU for animal experiments, and the authors should clearly indicate in the manuscript that such guidelines have been followed.