Electrophoretic methods were used to identify protein complexes formed between ostrich egg yolk lipoprotein fractions (LPFo) with seminal plasma (SP) of fractionated ejaculates, and to investigate the effect of these complexes on boar semen quality after cryopreservation. Chromatographic SP fractions (F1, F2 and F3), with or without LPFo solution, were subjected to sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE) analysis. Comparative electrophoretic analyses of the SP revealed marked differences in the SDS-PAGE protein profiles among boars. Electrophoretic analyses showed that the interactions of LPFo with SP resulted in the appearance of high-intensity protein bands. Spermatozoa were exposed to SP chromatographic fractions originating from F1, F2 and F3, and the whole SP (wSP) before being frozen. Spermatozoa exposed to F1 and F2 exhibited significantly higher post-thaw motility compared to those treated with either F3 or wSP. In most of the boars the proportions of membrane-intact frozen-thawed spermatozoa differed among the treatments, being significantly lower in the wSP-treated samples. The incidence of frozen-thawed spermatozoa with DNA fragmentation was less prevalent in samples exposed to F3 or the wSP. The results of this study confirmed that the interactions of LPFo with fractionated SP during the cooling period contributed to alterations in the sperm membranes, rendering them less susceptible to temperature-related injury.
The paper contains a short literature review on the subject of special type of thin film structures with resistiveswitching memory effect. In the literature, such structures are commonly labeled as "memristors". The word "memristor" originates from two words: "memory" and "resistor". For the first time, the memristor was theoretically described in 1971 by Leon Chua as the 4th fundamental passive electronics element with a non-linear current-voltage behavior. The reported area of potential usage of memristor is enormous. It is predicted that the memristor could find application, for example in the domain of nonvolatile random access memory, flash memory, neuromorphic systems and so forth. However, in spite of the fact that plenty of papers have been published in the subject literature to date, the memristor still behaves as a "mysterious" electronic element. It seems that, one of the important reasons that such structures are not yet in practical use, is unsufficient knowledge of physical phenomena determining occurrence of the switching effect. The present paper contains a literature review of available descriptions of theoretical basis of the memristor structures, used materials, structure configurations and discussion about future prospects and limitations.