In this paper, a low power highly sensitive Triple Metal Surrounding Gate (TM-SG) Nanowire MOSFET photosensor is proposed which uses triple metal gates for controlling short channel effects and III–V compound as the channel material for effective photonic absorption. Most of the conventional FET based photosensors that are available use threshold voltage as the parameter for sensitivity comparison but in this proposed sensor on being exposed to light there is a substantial increase in conductance of the GaAs channel underneath and, thereby change in the subthreshold current under exposure is used as a sensitivity parameter (i.e., I_illumination/I_Dark). In order to further enhance the device performance it is coated with a shell of Al_xGa_1-xAs which effectively passivates the GaAs surface and provides a better carrier confinement at the interface results in an increased photoabsorption. At last performance parameters of TM-SG Bare GaAs Nanowire MOSFET are compared with TM-SG core-shell GaAs/AlGaAs Nanowire MOSFET and the results show that Core-Shell structures can be a better choice for photodetection in visible region.