Details

Title

Analysis of triple metal surrounding gate (TM-SG) III–V nanowire MOSFET for photosensing application

Journal title

Opto-Electronics Review

Yearbook

2018

Volume

vol. 26

Issue

No 2

Authors

Keywords

ATLAS-3D ; Dark current ; Photosensor ; Quantum efficiency ; Responsivity ; TM-SG nanowire MOSFET

Divisions of PAS

Nauki Techniczne

Coverage

141-148

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

27.04.2018

Type

Article

Identifier

ISSN 1896-3757

Source

Opto-Electronics Review; 2018; vol. 26; No 2; 141-148

Abstracting & Indexing

Abstracting and Indexing:
Arianta
BazTech
EBSCO relevant databases
EBSCO Discovery Service
SCOPUS relevant databases
ProQuest relevant databases
Clarivate Analytics relevant databases
WangFang

additionally:
ProQuesta (Ex Libris, Ulrich, Summon)
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