Details
Title
Analysis of triple metal surrounding gate (TM-SG) III–V nanowire MOSFET for photosensing applicationJournal title
Opto-Electronics ReviewYearbook
2018Volume
vol. 26Issue
No 2Authors
Keywords
ATLAS-3D ; Dark current ; Photosensor ; Quantum efficiency ; Responsivity ; TM-SG nanowire MOSFETDivisions of PAS
Nauki TechniczneCoverage
141-148Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
27.04.2018Type
ArticleIdentifier
ISSN 1896-3757Source
Opto-Electronics Review; 2018; vol. 26; No 2; 141-148Abstracting & Indexing
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