Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.

In this paper ∼16 μm-emitting multimode InP-related quantum cascade lasers are presented with the maximum operating temperature 373 K, peak and average optical power equal to 720 mW and 4.8 mW at 303 K, respectively, and the characteristic temperature (T₀) 272 K. Two types of the lasers were fabricated and characterized: the lasers with a SiO₂ layer left untouched in the area of the metal-free window on top of the ridge, and the lasers with the SiO₂ layer removed from the metal-free window area. Dual-wavelength operation was obtained, at λ ∼ 15.6 μm (641 cm⁻¹) and at λ ∼ 16.6 μm (602 cm⁻¹) for lasers with SiO₂ removed, while within the emission spectrum of the lasers with SiO₂ left untouched only the former lasing peak was present. The parameters of these devices like threshold current, optical power and emission wavelength are compared. Lasers without the SiO₂ layer showed ∼15% lower threshold current than these ones with the SiO₂ layer. The optical powers for lasers without SiO₂ layer were almost twice higher than for the lasers with the SiO₂ layer on the top of the ridge.

A new approach to passive electromagnetic modelling of coupled–cavity quantum cascade lasers is presented in this paper. One of challenges in the rigorous analysis of such eigenvalue problem is its large size as compared to wavelength and a high quality factor, which prompts for substantial computational efforts. For those reasons, it is proposed in this paper to consider such a coupled-cavity Fabry-Perot resonant structure with partially transparent mirrors as a two-port network, which can be considered as a deterministic problem. Thanks to such a novel approach, passive analysis of an electrically long laser can be split into a cascade of relatively short sections having low quality factor, thus, substantially speeding up rigorous electromagnetic analysis of the whole quantum cascade laser. The proposed method allows to determine unequivocally resonant frequencies of the structure and the corresponding spectrum of a threshold gain. Eventually, the proposed method is used to elaborate basic synthesis rules of coupled–cavity quantum cascade lasers.

This paper presents some construction analysis and test results of a Free Space Optics system operating at the wavelength of 9.35 μm. In the system, a quantum cascade laser and a photoreceiver with mercury cadmium telluride photodetectors were used. The main parameters of these elements were discussed taking into account a data link operation. It also provides to determine a data range for various weather conditions related to scattering and scintillation. The results of numerical analyses defined the properties of currently available FSO technologies working in the near infrared or in the short infrared range of spectrum versus the performances of the developed system. The operation of this system was verified in three different test environments. The obtained results may also contain important issues related to the practical application of any FSO system.

Lasers emitting mid-infrared (MIR) beams have become indispensable for spectroscopy, free space communication or remote security measures. To the one of the most promising families of the lasers suitable for these applications certainly belongs a group of the Quantum Cascade Lasers (QCL). However, among the conditions they must satisfy there is a high enough radiance of the beam they emit. Radiance depends in a complicated way on the laser output power and optical quality of the laser beam. This paper has been devoted to a description and a short analysis of the factors that decide about radiance of so far developed QCLs. Literature concerning both single devices and QCL arrays operating in beam combining systems have been examined and results described. The survey may be useful for estimation of how far the QCLs have come of age.

We investigate the light-current-voltage characteristics and emission spectra of 2.3 THz quantum cascade laser operating in the negative differential resistance (NDR) region. It was shown that the formation of electric field domains (EFDs) leads to a large number of discontinuities on the current-voltage and the total optical power on current characteristics. Measurements of emission spectra at different current (before the NDR region and in the NDR region) shows that the formation of EFDs results in decrease of the output intensity, but does not influence on Fabry-Perot multi-mode structure of THz QCL. The developed theoretical model predicts the formation of EFDs in the NDR region and qualitatively explain the experimental results.

The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×10¹⁹ cm^–3 and 1×10²⁰ cm^–3 for lasers working at 9 μm and 5 μm, respectively. The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact layers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a distinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of –240 ÷ –780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.