Details
Title
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxyJournal title
Opto-Electronics ReviewYearbook
2016Volume
vol. 24Issue
No 1Authors
Keywords
MBE ; GaSb ; GaAs ; IR detectorsDivisions of PAS
Nauki TechniczneCoverage
40-45Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
08.02.2016Type
ArticleIdentifier
ISSN 1896-3757Source
Opto-Electronics Review; 2016; vol. 24; No 1; 40-45Abstracting & Indexing
Abstracting and Indexing:Arianta
BazTech
EBSCO relevant databases
EBSCO Discovery Service
SCOPUS relevant databases
ProQuest relevant databases
Clarivate Analytics relevant databases
WangFang
additionally:
ProQuesta (Ex Libris, Ulrich, Summon)
Google Scholar