Title

Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice

Journal title

Opto-Electronics Review

Yearbook

2021

Volume

29

Issue

1

Affiliation

Kopytko, Małgorzata : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Gomółka, Emilia : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Manyk, Tetiana : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Michalczewski, Krystian : Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland ; Kubiszyn, Łukasz : Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland ; Rutkowski, Jarosław : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Martyniuk, Piotr : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland

Authors

Kopytko, Małgorzata ; Gomółka, Emilia ; Manyk, Tetiana ; Michalczewski, Krystian ; Kubiszyn, Łukasz ; Rutkowski, Jarosław ; Martyniuk, Piotr

Keywords

infrared detector ; T2SLs ; superlattice ; III-V materials ; I-V characteristics

Divisions of PAS

Nauki Techniczne

Coverage

1-4

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Bibliography

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2. Olson, B. et al. Identification of dominant recombination mecha-nisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys. Appl. Phys. Lett. 103, 052106 (2013). https://doi.org/10.1063/1.4817400
3. White, M., 1983. Infrared Detectors. U.S. Patent 4,679,063.
4. Klipstein, P., 2003. Depletionless photodiode with suppressed dark current and method for producing the same. U.S. Patent 7,795,640.
5. Maimon, S. & Wicks, G. nBn detector, an infrared detector with reduced dark current and higher operating temperature. Appl. Phys. Lett. 89, 151109 (2006). https://doi.org/10.1063/1.2360235
6. Ting, D. Z.-Y. et al. Chapter 1 - Type-II Superlattice Infrared Detectors. in Advances in Infrared Photodetectors (eds. Gunapala, S. D., Rhiger, D. R. & Jagadish, C.) vol. 84 1–57 (Elsevier, 2011). https://doi.org/10.1016/B978-0-12-381337-4.00001-2
7. Benyahia, D. et al. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy. Opto-Electron. Rev. 24, 40–45 (2016).https://doi.org/10.1515/oere-2016-0007
8. Benyahia, D. et al. Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate. Opt. Quant. Electron. 48, 428 (2016). https://doi.org/10.1007/s11082-016-0698-4
9. Vurgaftman, I., Meyer, J. & Ram-Mohan, L. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001). https://doi.org/10.1063/1.1368156
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11. Chuang, Sh. L. Physics of optoelectronic devices. (Wiley, New York, 1995).
12. Van de Walle, C. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B 39, 1871–1883 (1989). https://doi.org/10.1103/PhysRevB.39.1871
13. Kopytko, M. et al. Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate. Proceedings 27, 37 (2019), https://doi.org/10.3390/proceedings2019027037
14. Hazbun, R. et al. Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates. Infrared Phys. Technol. 69, 211–217 (2015). https://doi.org/10.1016/j.infrared.2015.01.023
15. Livneh, Y. et al. k-p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices. Phys. Rev. B 86, 235311 (2012). https://doi.org/10.1103/PhysRevB.86.235311
16. Yu, P. & Cardona, M. Fundamentals of semicon-ductors: Physics and materials properties, 4th edn. (Springer, Heidelberg, 2010).
17. Adachi, S. Properties of group – IV, III-V and II-VI Semicon-ductors. (Wiley, London, 2005).
18. Manyk, T. et al. Method of electron affinity evalua¬tion for the type-2 InAs/InAs1-xSbx superlattice. J. Mater. Sci. 55, 5135–5144 (2020). https://doi.org/10.1007/s10853-020-04347-6

Date

28.01.2021

Type

Article

Identifier

DOI: 10.24425/opelre.2021.135823

Source

Opto-Electronics Review; 2021; 29; 1; 1-4