Details
Title
Comparison of TJ and ITO GaN VCSELs in terms of their frequency characteristicsJournal title
Opto-Electronics ReviewYearbook
2024Volume
32Issue
3Authors
Affiliation
Śpiewak, Patrycja : Institute of Physics, Lodz University of Technology, ul. Wólczańska 217/221, 93-005 Lodz, Poland ; Wasiak, Michał : Institute of Physics, Lodz University of Technology, ul. Wólczańska 217/221, 93-005 Lodz, Poland ; Sarzała, Robert P. : Institute of Physics, Lodz University of Technology, ul. Wólczańska 217/221, 93-005 Lodz, PolandKeywords
VCSELs ; nitride ; capacitance phenomena ; computer modellingDivisions of PAS
Nauki TechniczneCoverage
e150609Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
18.06.2024Type
ArticleIdentifier
DOI: 10.24425/opelre.2024.150609Abstracting & Indexing
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