Details
Title
Why FETs detect a THz signal at a frequency far beyond their amplifying capabilitiesJournal title
Opto-Electronics ReviewYearbook
2024Volume
32Issue
4Authors
Affiliation
Marczewski, Jacek : Institute of Microelectronics and Photonics, Lukasiewicz Research Center, al. Lotników 32/46, 02-668 Warsaw, Poland ; Zaborowski, Michał : Institute of Microelectronics and Photonics, Lukasiewicz Research Center, al. Lotników 32/46, 02-668 Warsaw, Poland ; Tomaszewski, Daniel : Institute of Microelectronics and Photonics, Lukasiewicz Research Center, al. Lotników 32/46, 02-668 Warsaw, Poland ; Zagrajek, Przemysław : Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw, Poland ; Pałka, Norbert : Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw, PolandKeywords
terahertz detection ; field-effect transistors ; Dyakonov-Shur theory ; resistive mixing ; surface plasmonsDivisions of PAS
Nauki TechniczneCoverage
e151989Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
02.10.2024Type
ArticleIdentifier
DOI: 10.24425/opelre.2024.151989Abstracting & Indexing
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