Details Details PDF BIBTEX RIS Title Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors Journal title Opto-Electronics Review Yearbook 2024 Volume 32 Issue 4 Affiliation Jarosz, Dawid : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Bobko, Ewa : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Trzyna-Sowa, Małgorzata : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Przeździecka, Ewa : Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland ; Stachowicz, Marcin : Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland ; Ruszała, Marta : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Krzemiński, Piotr : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Juś, Anna : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Maś, Kinga : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Wojnarowska-Nowak, Renata : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Nowak, Oskar : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Gudyka, Daria : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Tabor, Brajan : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Marchewka, Michał : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland Authors Jarosz, Dawid ; Bobko, Ewa ; Trzyna-Sowa, Małgorzata ; Przeździecka, Ewa ; Stachowicz, Marcin ; Ruszała, Marta ; Krzemiński, Piotr ; Juś, Anna ; Maś, Kinga ; Wojnarowska-Nowak, Renata ; Nowak, Oskar ; Gudyka, Daria ; Tabor, Brajan ; Marchewka, Michał Keywords gallium arsenide ; gallium antimonide ; molecular beam epitaxy ; heteroepitaxy Divisions of PAS Nauki Techniczne Coverage e152620 Publisher Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology Date 29.10.2024 Type Article Identifier DOI: 10.24425/opelre.2024.152620