Title

Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors

Journal title

Opto-Electronics Review

Yearbook

2024

Volume

32

Issue

4

Authors

Jarosz, Dawid ; Bobko, Ewa ; Trzyna-Sowa, Małgorzata ; Przeździecka, Ewa ; Stachowicz, Marcin ; Ruszała, Marta ; Krzemiński, Piotr ; Juś, Anna ; Maś, Kinga ; Wojnarowska-Nowak, Renata ; Nowak, Oskar ; Gudyka, Daria ; Tabor, Brajan ; Marchewka, Michał

Affiliation

Jarosz, Dawid : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Bobko, Ewa : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Trzyna-Sowa, Małgorzata : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Przeździecka, Ewa : Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland ; Stachowicz, Marcin : Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland ; Ruszała, Marta : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Krzemiński, Piotr : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Juś, Anna : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Maś, Kinga : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Wojnarowska-Nowak, Renata : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Nowak, Oskar : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Gudyka, Daria : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Tabor, Brajan : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Marchewka, Michał : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

Keywords

gallium arsenide ; gallium antimonide ; molecular beam epitaxy ; heteroepitaxy

Divisions of PAS

Nauki Techniczne

Coverage

e152620

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

29.10.2024

Type

Article

Identifier

DOI: 10.24425/opelre.2024.152620

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