How to search?
advanced search
Applied sciences

Opto-Electronics Review

Opto-Electronics Review

Description
Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:


  • Optical Design and Applications,
  • Image Processing (without AI Algorithm Optimisation)
  • Plasmonics, nanooptics, and metamaterials,
  • Optoelectronic Materials,
  • Micro-Opto-Electro-Mechanical Systems,
  • Infrared Physics and Technology,
  • Modelling of Optoelectronic Devices, Semiconductor Lasers

  • Technology and Fabrication of Optoelectronic Devices,
  • Photonic Crystals,
  • Laser Physics, Technology and Applications,
  • Optical Sensors and Applications,
  • Photovoltaics,
  • Biomedical Optics and Photonics

Submit your article


Journal Metrics:
JCR Impact Factor 2023: 1.3
5 Year Impact Factor 2022: 2
SCImago Journal Rank (SJR) 2023: 0.267
Source Normalized Impact per Paper (SNIP) 2023: 0.525
CiteScore 2023: 1.9
Ministry of Education and Science 2021*: 100 points
* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN
ISSN 1896-3757
Publishers
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland


Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland


International Editorial Advisory Board


D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland


Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl


Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.


The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

  • Volumes
  • Instructions for authors
  • Additional info

Select number

Content

Opto-Electronics Review | 2021 | 29 | 3

1 Numerical analysis of the compositional graded quaternary barrier AlGaN-based ultraviolet-C light-emitting diode
Shahzeb Malik , Muhammad Usman , Masroor Hussain , Munaza Munsif , Sibghatullah Khan , Saad Rasheed , Shazma Ali
Opto-Electronics Review | 2021 | 29 | 3 | 80-84 | DOI: 10.24425/opelre.2021.135831
Keywords: ultraviolet light-emitting diodes efficiency quantum wells
Download PDF Download RIS Download Bibtex

Abstract

The compositional graded quaternary barriers (GQBs) instead of ternary/conventional quantum barriers (QBs) have been used to numerically enhance the efficiency of AlGaN-based ultraviolet light-emitting diode (LED). The performance of LED with GQBs is examined through carrier concentrations, energy band diagrams, radiative recombination, electron and hole flux, internal quantum efficiency (IQE), and emission spectrum. As a function of the operating current density, a considerable reduction in efficiency droop is observed in the device with composition-graded quaternary barriers as compared to the conventional structure. The efficiency droop in case of a conventional LED is ~77% which decreased to ~33% in case of the proposed structure. Moreover, the concentration of electrons and holes across the active region in case of the proposed structure is increased to ~156% and ~44%, respectively.
Go to article

Bibliography

  1. Würtele, M. et al. Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection. Water Res. 45, 1481–1489 (2011), https://doi.org/10.1016/j.watres.2010.11.015
  2. Khan, A., Balakrishnan, K. & Katona, T. Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics 2, 77–84 (2008), https://doi.org/10.1038/nphoton.2007.293
  3. Usman, M., Malik, S. & Munsif, M. AlGaN-based ultraviolet light-emitting diodes: Challenges and Opportunities. Luminescence 36, 294–305 (2021), https://doi.org/10.1002/bio.3965
  4. Hirayama, H., Maeda, N., Fujikawa, S., Toyoda, S. & Kamata, N. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 53, 100209 (2014), http://doi.org/10.7567/JJAP.53.100209
  5. Kneissl, M. A brief review of III-nitride UV emitter technologies and their applications. in III-Nitride Ultraviolet Emitters: Technology and Applications. Springer Series in Materials Science, vol 227. (eds. Kneissl, M. & Rass, J.) 1–25 (Springer Cham, 2016). https://doi.org/10.1007/978-3-319-24100-5_1
  6. Usman, M., Malik, S., Khan, M. A. & Hirayama, H. Suppressing the efficiency droop in AlGaN-based UVB LEDs. Nanotechnology 32, 215703 (2021), https://doi.org/10.1088/1361-6528/abe4f9
  7. Heilingloh, C. S. et al. Susceptibility of SARS-CoV-2 to UV irradiation. Am. J. Infect. Control 48, 1273¬1275 (2020), https://doi.org/10.1016/j.ajic.2020.07.031
  8. Khan, M. A., Shatalov, M., Maruska, H., Wang, H. & Kuokstis, E. III–nitride UV devices. Jpn. J. Appl. Phys. 44, 7191 (2005), https://doi.org/10.1143/jjap.44.7191
  9. Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Technol. 26, 014036 (2010), https://doi.org/10.1088/0268-1242/26/1/014036
  10. Shatalov, M. et al. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%. Appl. Phys. Express 5, 082101 (2012), https://doi.org/10.1143/apex.5.082101
  11. Pernot, C. et al. Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes. Phys. Status Solidi A 208, 1594–1596 (2011), https://doi.org/10.1002/pssa.201001037
  12. Huang, C., Zhang, H. & Sun, H. Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system. Nano Energy, 77, 105149 (2020), https://doi.org/10.1016/j.nanoen.2020.105149
  13. Chen, K. et al. Effect of dislocations on electrical and optical properties of n-type Al 0.34 Ga 0.66 N. Appl. Phys. Lett. 93, 192108 (2008), https://doi.org/10.1063/1.3021076
  14. Hirayama, H., Tsukada, Y., Maeda, T. & Kamata, N. Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Express 3, 031002 (2010), https://doi.org/10.1143/apex.3.031002
  15. Huang, M.-F. & Lu, T.-H. Optimization of the active-layer structure for the deep-UV AlGaN light-emitting diodes. IEEE J. Quantum Electron. 42, 820–826 (2006), https://doi.org/10.1109/JQE.2006.877217
  16. Lu, L. et al. Improving performance of algan‐based deep‐ultraviolet light‐emitting diodes by inserting a higher Al‐content algan layer within the multiple quantum wells. Phys. Status Solidi A 214, 1700461 (2017), https://doi.org/10.1002/pssa.201700461
  17. Arif, R. A., Ee, Y. K. & Tansu, N. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm. Phys. Status Solidi A 205, 96–100 (2008), https://doi.org/10.1002/pssa.200777478
  18. Usman, M. et al. Zigzag-shaped quantum well engineering of green light-emitting diode. Superlattices Microstruct. 132, 106164, (2019) https://doi.org/10.1016/j.spmi.2019.106164
  19. Usman, M. et al. Enhanced internal quantum efficiency of bandgap-engineered green W-shaped quantum well light-emitting diode. Appl. Sci. 9, 77 (2019), https://doi.org/10.3390/app9010077
  20. Yang, G. et al. Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells. Physica E 62, 55–58 (2014), https://doi.org/10.1016/j.physe.2014.04.014
  21. Zhang, Y. et al. The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers. Superlattices Microstruct. 82, 151–157 (2015), https://doi.org/10.1016/j.spmi.2015.02.004
  22. Li, Y. et al. Advantages of AlGaN-based 310-nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers. IEEE Photonics J. 5, 8200309–8200309 (2013), https://doi.org/10.1109/JPHOT.2013.2271718
  23. Fan, X. et al. Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer. Superlattices Microstruct. 88, 467–473 (2015), https://doi.org/10.1016/j.spmi.2015.10.003
  24. Huang, J. et al. Study of deep ultraviolet light-emitting diodes with ap-AlInN/AlGaN superlattice electron-blocking layer. J. Electron. Mater. 46, 4527–4531 (2017), https://doi.org/10.1007/s11664-017-5413-0
  25. Usman, M., Jamil, T., Malik, S. & Jamal, H. Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency. Optik 232, 166528 (2021). https://doi.org/10.1016/j.ijleo.2021.166528
  26. Zhang, X. et al. Efficiency improvements in AlGaN-based deep-ultraviolet light-emitting diodes with graded superlattice last quantum barrier and without electron blocking layer. J. Electron. Mater. 48, 460–466 (2019). https://doi.org/10.1007/s11664-018-6716-5
  27. Li, K., Zeng, N., Liao, F. & Yin, Y. Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect. Superlattices Microstruct. 145, 106601 (2020). https://doi.org/10.1016/j.spmi.2020.106601
  28. Shatalov, M. et al. Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells. IEEE J. Sel. Top. Quantum Electron. 8, 302–309 (2002). https://doi.org/10.1109/2944.999185
  29. Chen, X., Wang, D. & Fan, G. Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with AlInGaN/AlInGaN super-lattice electron blocking layer. J. Electron. Mater. 48, 2572–2576 (2019). https://doi.org/10.1007/s11664-019-07001-3
  30. Kim, S. J. & Kim, T. G. Numerical study of enhanced performance in InGaN light-emitting diodes with graded-composition AlGaInN barriers. J. Opt. Soc. Korea 17, 16-21 (2013) . https://doi.org/10.3807/JOSK.2013.17.1.016
  31. Adivarahan, V. et al. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells. Appl. Phys. Lett. 79, 4240–4242 (2001). https://doi.org/10.1063/1.1425453
  32. Chen, C. et al. Pulsed metalorganic chemical vapor deposition of quaternary AlInGaN layers and multiple quantum wells for ultraviolet light emission. Jpn. J. Appl. Phys. 41, 1924 (2002). https://doi.org/10.1143/jjap.41.1924
Go to article

Authors and Affiliations

Shahzeb Malik
1
Muhammad Usman
1
ORCID: ORCID
Masroor Hussain
2
Munaza Munsif
1
Sibghatullah Khan
1
Saad Rasheed
1
Shazma Ali
1
  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
  2. Faculty of Computer Sciences and Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
2 Performance evaluation of UFMC-based VLC systems using a modified SLM technique
Eslam M. Shalaby , E. Dessouky , Saleh Hussin
Opto-Electronics Review | 2021 | 29 | 3 | 85-90 | DOI: 10.24425/opelre.2021.135832
Keywords: universal filtered multi-carrier orthogonal frequency division multiplexing (OFDM) signal peak-to-average power ratio selected-mapping discrete Hartley transform precoding
Download PDF Download RIS Download Bibtex

Abstract

Universal filtered multi-carrier (UFMC) is being studied as the favourable waveforms supporting the visible light communication broadcasting systems. However, the UFMC system faces a serious performance degradation on the transmitter side due to its high peak-to-average power ratio (PAPR). High PAPR of the signal is an analytical intention parameter for mobile networks, and it is necessary to minimize it as much as possible. This paper focuses on the PAPR reduction of the UFMC scheme. An efficient hybrid method of the PAPR reduction has been proposed and analysed through the Matlab™ simulation. The proposed hybrid scheme consists of a mixture of the selected-mapping method and the discrete Hartley transform precoding for a UFMC system (SLM-DHT-P-UFMC). The simulation results show that the proposed hybrid system has a better PAPR reduction performance compared to traditional SLM-UFMC and DHT-P-UFMC systems. Hence, SLM-DHT-P-UFMC is considered to be the suggested scheme in visible light communication broadcasting systems.
Go to article

Bibliography

  1. Mohammed, N. A. & Elkarim, M. A. Exploring the effect of diffuse reflection on indoor localization systems based on RSSI-VLC. Opt. Express 23, 20297–20313 (2015). https://doi.org/10.1364/OE.23.020297
  2. Gerzaguet, R. et al. The 5G candidate waveform race: a comparison of complexity and performance. EURASIP J. Wirel. Commun. Netw. 2017, 13 (2017). https://doi.org/10.1186/s13638-016-0792-0
  3. Ambatali, C. D. M. & Marciano, J. J. S. Performance evaluation of the UFMC scheme under various transmission impairments. in 2016 IEEE International Conference on Communication, Networks and Satellite (COMNETSAT) 24–28 (2017). https://doi.org/10.1109/COMNETSAT.2016.7907410
  4. Vakilian, V., Wild, T., Schaich, F., Ten Brink, S. & Frigon, J. F. Universal-filtered multi-carrier technique for wireless systems beyond LTE. in 2013 IEEE Globecom Workshops (GC Wkshps) 223–228 (2013). https://doi.org/10.1109/GLOCOMW.2013.6824990
  5. Naga Rani, P. & Santhi Rani, C. H. UFMC: The 5G modulation technique. in 2016 IEEE International Conference on Computational Intelligence and Computing Research (ICCIC) (2016). https://doi.org/10.1109/ICCIC.2016.7919714
  6. Jebbar, H., El Hassani, S. & El Abbassi, A. Performance study of 5G multicarrier waveforms. in 2017 International Conference on Wireless Networks and Mobile Communications (WINCOM) (2017). https://doi.org/10.1109/WINCOM.2017.8238183
  7. 5G Waveform Candidates: Rohde & Schwarz White Paper - GSA. https://gsacom.com/paper/5g-waveform-candidates-rohde-schwarz- white-paper/
  8. Wild, T., Schaich, F. & Chen, Y. 5G air interface design based on universal filtered (UF-)OFDM. in 2014 19th International Conference on Digital Signal Processing, 699–704 (2014). https://doi.org/10.1109/ICDSP.2014.6900754
  9. Schaich, F., Wild, T. & Chen, Y. Waveform contenders for 5G - Suitability for short packet and low latency transmissions. in 2014 IEEE 79th Vehicular Technology Conference (VTC Spring) (2014). https://doi.org/10.1109/VTCSpring.2014.7023145
  10. Baig, I. et al. A low PAPR DHT precoding based UFMC scheme for 5G communication systems. in 2019 6th International Conference on Control, Decision and Information Technologies (CoDIT) 425−428 (2019). https://doi.org/10.1109/CoDIT.2019.8820502
  11. Baig, I. et al. A Low PAPR universal filtered multi-carrier system for 5G machine type communications. in 2019 Wireless Days (WD) 1–4 (2019). https://doi.org/10.1109/WD.2019.8734188
  12. Misra, J. & Mandal, R. Comparative analysis of PAPR reduction techniques in OFDM using precoding techniques. Int. J. Sci. Res. Dev. 3, 1041–1043 (2015).
  13. Sandoval, F., Poitau, G. & Gagnon, F. Hybrid peak-to-average power ratio reduction techniques: review and performance comparison. IEEE Access 5, 27145–27161 (2017). https://doi.org/10.1109/ACCESS.2017.2775859
  14. Zhang, Y., Liu, K. & Liu, Y. A Novel PAPR reduction algorithm based on SLM technique in UFMC systems. in 2018 IEEE/CIC International Conference on Communications in China (ICCC Workshops) 178–183 (2018). https://doi.org/10.1109/ICCChinaW.2018.8674491
Go to article

Authors and Affiliations

Eslam M. Shalaby
1
E. Dessouky
2
Saleh Hussin
2
  1. Electronics and Communication Engineering Department, Higher Technological Institute, 10th of Ramadan City, Sharqia, 44629 Egypt
  2. Electronics and Communication Engineering Department, Faculty of Engineering Menoufia University, Menoufia, 32511 Egypt
3 Signal processing for time resolved photoluminescence spectroscopy
Kacper Grodecki , Krzysztof Murawski , Jarosław Rutkowski , Andrzej Kowalewski , Jan Sobieski
Opto-Electronics Review | 2021 | 29 | 3 | 91-96 | DOI: 10.24425/opelre.2021.139038
Keywords: epitaxy HgCdTe photoluminescence time resolved photoluminescence
Download PDF Download RIS Download Bibtex

Abstract

Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg(1-x)CdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Go to article

Bibliography

  1. Kopytko, M. et al. High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD. Opto-Electron. Rev. 21, 402–405 (2013). https://doi.org/10.2478/s11772-013-0101-y
  2. Kopytko, M., Kebłowski, A., Gawron, W. & Madejczyk, P. Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors. Opto-Electron. Rev. 23, 143–148 (2015). https://doi.org/10.1515/oere-2015-0017
  3. Rogalski, A. HgCdTe infrared detector material: History, status and outlook. Rep. Prog. Phys. 68, 2267–2336 (2005). https://doi.org/10.1088/0034-4885/68/10/R01
  4. Bhan, R. K. & Dhar, V. Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infra-red focal plane arrays and their characterization. Opto-Electron. Rev. 27, 174–193 (2019). https://doi.org/10.1016/j.opelre.2019.04.004
  5. Izhnin, I. et al. Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs. Opto-Electron. Rev. 21, 390–394 (2013). https://doi.org/10.2478/s11772-013-0103-9
  6. Madejczyk, P. et al. Control of acceptor doping in MOCVD HgCdTe epilayers. Opto-Electron. Rev. 18, 271–276 (2010). https://doi.org/10.2478/s11772-010-1023-x
  7. Martyniuk, P., Koźniewski, A., Kebłowski, A., Gawron, W. & Rogalski, A. MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions. Opto-Electron. Rev. 22, 118–126 (2014). https://doi.org/10.2478/s11772-014-0186-y
  8. Piotrowski, J. et al. Uncooled MWIR and LWIR photodetectors in Poland. Opto-Electron. Rev. 18, 318–327 (2010). https://doi.org/10.2478/s11772-010-1022-y
  9. Wang, H., Hong, J., Yue, F., Jing, C. & Chu, J. Optical homogeneity analysis of Hg1−xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands? Infrared Phys. Technol. 82, 1–7 (2017). https://doi.org/10.1016/j.infrared.2017.02.007
  10. Yue, F., Wu, J. & Chu, J. Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra. Appl. Phys. Lett. 93, 131909 (2008). https://doi.org/10.1063/1.2983655
  11. Yue, F. Y. et al. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications. Chin. Phys. B 28, 17104 (2019). https://doi.org/10.1088/1674-1056/28/1/017104
  12. Hyvärinen, A. & Oja, E. Independent component analysis: Algorithms and applications. Neural Netw. 13, 411–430 (2000). https://doi.org/10.1016/S0893-6080(00)00026-5
  13. Grodecki, K. et al. Enhanced Raman spectra of hydrogen-intercalated quasi-free-standing monolayer graphene on 4H-SiC(0001). Physica E 117, 113746 (2020). https://doi.org/10.1016/j.physe.2019.113746
  14. Grodecki, K. & Murawski, K. New data analysis method for time-resolved infrared photoluminescence spectroscopy. Appl. Spectrosc. 75, 596-599 (2020). https://doi.org/10.1177/0003702820969700
  15. Hong-Yan, L., Zhao, Q. H., Ren, G. L. & Xiao, B. J. Speech enhancement algorithm based on independent component analysis. in 5th Int. Conf. on Natural Computation (ICNC 2009) 2, 598–602 (2009). https://doi.org/10.1109/ICNC.2009.76
  16. Wen, S. & Ding, D. FASTICA-based firefighters speech noise reduction. in Proc. 2015 of 8th Int. Congress on Image and Signal Processing (CISP 2015) 1423–1426 (2016). https://doi.org/10.1109/CISP.2015.7408106
  17. Yue, F. Y. et al. Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications. Chin. Phys. B 28, 17104–017104 (2019). https://doi.org/10.1088/1674-1056/28/1/017104
  18. Zhang, X. et al. Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K. J. Appl. Phys. 110, 043503 (2011). https://doi.org/10.1063/1.3622588
Go to article

Authors and Affiliations

Kacper Grodecki
1
ORCID: ORCID
Krzysztof Murawski
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID
Andrzej Kowalewski
1
ORCID: ORCID
Jan Sobieski
1
ORCID: ORCID
  1. Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland
4 Solar cells based on copper oxide and titanium dioxide prepared by reactive direct-current magnetron sputtering
Grzegorz Wisz , Paulina Sawicka-Chudy , Maciej Sibiński , Zbigniew Starowicz , Dariusz Płoch , Anna Góral , Mariusz Bester , Marian Cholewa , Janusz Woźny , Aleksandra Sosna-Głębska
Opto-Electronics Review | 2021 | 29 | 3 | 97-105 | DOI: 10.24425/opelre.2021.139039
Keywords: solar cells copper oxides titanium dioxide reactive magnetron sputtering
Download PDF Download RIS Download Bibtex

Abstract

In this study, solar cells based on copper oxide and titanium dioxide were successfully manufactured using the reactive direct-current magnetron sputtering (DC-MS) technique with similar process parameters. TiO2/CuO, TiO2/Cu2O/CuO/Cu2O, and TiO2/Cu2O solar cells were manufactured via this process. Values of efficiencies, short-circuit current, short-circuit current density, open-circuit voltage, and maximum power of PV devices were investigated in the range of 0.02÷0.9%, 75÷350 µA, 75÷350 µA/cm2, 16÷550 mV, and 0.6÷27 µW, respectively. The authors compare solar cells reaching the best and the worst conversion efficiency results. Thus, only the two selected solar cells were fully characterized using I-V characteristics, scanning electron microscopy, X-ray diffraction, ellipsometry, Hall effect measurements, and quantum efficiency. The best conversion efficiency of a solar cell presented in this work is about three times higher in comparison with the authors’ previous PV devices.
Go to article

Bibliography

  1. Olczak, P., Kryzia, D., Matuszewska, D. & Kuta, M. “My Electricity” program effectiveness supporting the development of PV installation in Poland. Energies 14, 231 (2021). https://doi.org/10.3390/en14010231
  2. Cader, J., Olczak, P. & Koneczna, R. Regional dependencies of interest in the ‘My Electricity’ photovoltaic subsidy program in Poland. Polityka Energetyczna – Energy Policy Journal 24, 97–116 (2021). https://doi.org/10.33223/epj/133473
  3. Zhang, Y. & Park, N.-G. A thin film (<200 nm) perovskite solar cell with 18% efficiency. J. Mater. Chem. A 34 17420–17428 (2020). https://doi.org/10.1039/D0TA05799A
  4. Luo, Y. et al. Electrochemically deposited Cu2O on TiO2 nanorod arrays for photovoltaic application. Electrochem. Solid-State Lett. 15, H34–H36 (2012). https://doi.org/10.1149/2.016202esl
  5. Pavan, M. et al. TiO2/Cu2O all-oxide heterojunction solar cells produced by spray pyrolysis. Sol. Energy Mater. Sol. Cells 132, 549–556 (2015). https://doi.org/10.1016/j.solmat.2014.10.005
  6. Rokhmat, M., Wibowo, E., Sutisna, Khairurrijal & Abdullah, M. Performance improvement of TiO2/CuO solar cell by growing copper particle using fix current electroplating method. Procedia Eng. 170, 72–77 (2017). https://doi.org/10.1016/j.proeng.2017.03.014
  7. Sawicka-Chudy, P. et al. Simulation of TiO2/CuO solar cells with SCAPS-1D software. Mater. Res. Express 6, 085918 (2019). https://doi.org/10.1088/2053-1591/ab22aa
  8. Zhu, L. Development of Metal Oxide Solar Cells through Numerical Modelling. (University of Bolton, Bolton, 2012).
  9. Hussain, S. et al. Fabrication and photovoltaic characteristics of Cu2O/TiO2 thin film heterojunction solar cell. Thin Solid Films 522, 430–434 (2012). https://doi.org/10.1016/j.tsf.2012.08.013
  10. Hussain, S. et al. Cu2O/TiO2 nanoporous thin-film heterojunctions: Fabrication and electrical characterization. Mater. Sci. Semicond. Process. 25, 181–185 (2014). https://doi.org/10.1016/j.mssp.2013.11.018
  11. Sawicka-Chudy, P. et al. Review of the development of copper oxides with titanium dioxide thin film solar cells. AIP Adv. 10, 010701 (2020). https://doi.org/10.1063/1.5125433
  12. Yang, Y., Xu, D., Wu, Q. & Peng, D. Cu2O/CuO bilayered composite as a high-efficiency photocathode for photoelectro-chemical hydrogen evolution reaction. Sci. Rep. 6, 35158 (2016). https://doi.org/10.1038/srep35158
  13. Ichimura, M. & Kato, Y. Fabrication of TiO2/Cu2O heterojunction solar cells by electrophoretic deposition and electrodeposition. Mater. Sci. Semicond. Process. 16, 1538–1541 (2013). https://doi.org/10.1016/j.mssp.2013.05.004
  14. Zhang, W., Li, Y., Zhu, S. & Wang, F. Influence of argon flow rate on TiO2 photocatalyst film deposited by dc reactive magnetron sputtering. Surf. Coat. Technol. 182, 192–198 (2004). https://doi.org/10.1016/j.surfcoat.2003.08.050
  15. Sawicka-Chudy, P. et al. Characteristics of TiO2, Cu2O, and TiO2/Cu2O thin films for application in PV devices. AIP Adv. 9, 055206 (2019). https://doi.org/10.1063/1.5093037
  16. Sawicka-Chudy, P. et al. Performance improvement of TiO2/CuO by increasing oxygen flow rates and substrate temperature using DC reactive magnetron sputtering method. Optik 206, 164297 (2020). https://doi.org/10.1016/j.ijleo.2020.164297
  17. Li, D. et al. Prototype of a scalable core–shell Cu2O/TiO2 solar cell. Chem. Phys. Lett. 501, 446–450 (2011). http://doi.org/10.1016/j.cplett.2010.11.064
  18. van der Pauw, L. J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. 13, 1–9 (1958). https://doi.org/10.1142/9789814503464_0017
  19. ASTM F76-08(2016)e1, Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in, Single-Crystal Semiconductors (ASTM International, West Conshohocken, USA, 2016). https://doi.org/10.1520/F0076-08R16E01
  20. Ziaja, J. Cienkowarstwowe Struktury Metaliczne i Tlenkowe. Właści-wości, Technologia, Zastosowanie w Elektrotechnice (Oficyna Wydawnicza Politechniki Wrocławskiej, Wrocław, 2012). [in Polish]
  21. Łowkis, B., Ziaja, J., Klaus P. & Krawczyk D. Effect of magnetron sputtering parameters on dielectric properties of PTFE foil. IEEE Trans. Dielectr. Electr. Insul. 27, 837–841 (2020). https://doi.org/10.1109/TDEI.2020.008710
  22. Gulkowski, S. & Krawczak, E. RF/DC magnetron sputtering deposition of thin layers for solar cell fabrication. Coatings 10, 1–14 (2020). https://doi.org/10.3390/coatings10080791
  23. Zhang, D. K., Liu, Y. C., Liu, Y. L. & Yang, H. The electrical properties and the interfaces of Cu2O/ZnO/ITO p–i–n heterojunction. Physica B 351, 178–183 (2004). https://doi.org/10.1016/j.physb.2004.06.003
  24. Scherrer, P. Bestimmung der inneren Struktur und der Größe von Kolloidteilchen mittels Röntgenstrahlen. in Kolloidchemie Ein Lehrbuch 387–409 (Springer Berlin, Heidelberg, 1912). https://doi.org/10.1007/978-3-662-33915-2_7
  25. Forsyth J.B, Hull S. The effect of hydrostatic pressure on the ambient temperature structure of CuO. J. Phys.: Condens. Matter 35257-5261 (1991). https://doi.org/10.1088/0953-8984/3/28/001
  26. Hanke, L., Fröhlich, D., Ivanov, A., Littlewood, P. B. & Stolz, H. LA Phonoritons in Cu2O. Phys. Rev. Lett. 83, 4365–4368 (1999). https://doi.org/10.1103/PhysRevLett.83.4365
  27. Straumanis, M.  E. & Yu, L. S. Lattice parameters, densities, expansion coefficients and perfection of structure of Cu and Cu-In alpha phase. Acta Cryst. A25, 676–682 (1969). https://doi.org/10.1107/S0567739469001549
  28. Chrzanowska-Giżyńska, J. Cienkie warstwy z borków wolframu osadzane impulsem laserowym i metodą rozpylania magnetronowego –wpływ parametrów procesu na osadzone warstwy. (Instytut Podstawowych Problemów Techniki, Polska Akademia Nauk, Warszawa, 2017). [in Polish]
  29. Wong, T. K., Zhuk, S., Masudy-Panah, S. & Dalapati, G. K. Current status and future prospects of copper oxide heterojunction solar cells. Materials 9, 271 (2016). https://doi.org/10.3390/ma9040271
  30. Gao, X., Du, Y. & Meng, X. Cupric oxide film with a record hole mobility of 48.44 cm2/Vs via direct–current reactive magnetron sputtering for perovskite solar cell application. Sol. Energy 191, 205–209 (2019). https://doi.org/10.1016/j.solener.2019.08.080
  31. Hu, X. et al. Influence of oxygen pressure on the structural and electrical properties of CuO thin films prepared by pulsed laser deposition. Mater. Lett. 176, 282–284 (2016). https://doi.org/10.1016/j.matlet.2016.04.055
Go to article

Authors and Affiliations

Grzegorz Wisz
1
ORCID: ORCID
Paulina Sawicka-Chudy
1
ORCID: ORCID
Maciej Sibiński
2
ORCID: ORCID
Zbigniew Starowicz
3
ORCID: ORCID
Dariusz Płoch
1
ORCID: ORCID
Anna Góral
3
Mariusz Bester
1
ORCID: ORCID
Marian Cholewa
1
Janusz Woźny
4
ORCID: ORCID
Aleksandra Sosna-Głębska
2
  1. Institute of Physics, College of Natural Science, University of Rzeszów, 1 Pigonia St., 35-317 Rzeszów, Poland
  2. Department of Semiconductor and Optoelectronic Devices, Łódź University of Technology, 211/215 Wólczańska St., 90-924 Łódź, Poland
  3. Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Kraków, Poland
  4. Department of Semiconductor and Optoelectronic Devices, Łódź University of Technology, 211/215Wólczańska St., 90-924 Łódź, Poland

Instructions for authors

Guide for Authors

https://www.editorialsystem.com/opelre/journal/for_authors/

OPTO-ELECTRONICS REVIEW is an open access journal. This involves the payment of an article publishing charge (APC) by the authors, their institution or funding body. We make the article freely available immediately upon publication on PAS Jornals platform (https://journals.pan.pl/opelre)

As of July 1st, 2024, there are changes in the fees for open access publications in Opto-Electronics Review: 2000 PLN (500 EUR) - up to 8 pages of the journal format and mandatory over-length charges of 200 PLN (50 EUR) per page (see the above link with instructions for Authors for details)

Articles submitted by June 30th, 2024: existing fee: 1750 PLN (or 400 EUR)

Articles submitted from July 1st, 2024: new fee: 2000 PLN (or 500 EUR) - a flat fee per paper up to 8 pages of the journal format (each additional page will be charged an additional 200 PLN or 50 EUR).

Additional info

barwy Rzeczypospolitej Polskiej i wizerunek godła Rzeczypospolitej Polskiej

DOFINANSOWANO ZE ŚRODKÓW BUDŻETU PAŃSTWA
Rozwój czasopism naukowych
Nr projektu: RCN/SN/0652/2021/1
Dofinansowanie: 85 700 zł
Całkowita wartość: 85 700 zł
Data podpisania umowy: 6 grudnia 2022 r.
Celem projektu jest wsparcie działalności wydawniczej Opto-Electronics Review w zakresie poprawy widoczności czasopisma na arenie krajowej i międzynarodowej oraz podwyższenia jakości edytorskiej prezentowanych treści.

CO-FINANCED FROM THE STATE BUDGET
Development of scientific journals
Project number: RCN/SN/0652/2021/1
Funding: PLN 85,700
Total value: PLN 85,700
Date of signing the contract: December 6, 2022.
The project aims to support the publishing activities of Opto-Electronics Review to improve the journal's visibility in the national and international arena and increase the editorial quality of the presented content.

Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encouraged. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded.

Articles are published in OPELRE in the following categories:

-invited reviews presenting the current state of the knowledge,

-specialized topics at the forefront of optoelectronics and photonics and their applications,

-refereed research contributions reporting on original scientific or technological achievements,

-conference papers printed in normal issues as invited or contributed papers.

Authors of review papers are encouraged to write articles of relevance to a wide readership including both those established in this field of research and non-specialists working in related areas. Papers considered as “letters” are not published in OPELRE.

Opto-Electronics Review is published quarterly as a journal of the Association of Polish Electrical Engineers (SEP) and Polish Academy of Sciences (PAS) in cooperation with the Military University of Technology and under the auspices of the Polish Optoelectronics Committee of SEP.

Abstracting and Indexing:

Arianta

BazTech

EBSCO relevant databases

EBSCO Discovery Service

SCOPUS relevant databases

ProQuest relevant databases

Clarivate Analytics relevant databases

WangFang

additionally:

ProQuesta (Ex Libris, Ulrich, Summon)

Google Scholar

Policies and ethics:

The editors of the journal place particular emphasis on compliance with the following principles:

Ethical policy of Opto-Electronics Review

The ethical policy of Opto-Electronics Review follows the European Code of Conduct for Research Integrity and is also guided by the core practices and policies outlined by the Committee on Publication Ethics (COPE).

Authors must be honest in presenting their results and conclusions of their research. Research misconduct is harmful for knowledge.

Research results

Fabrication, falsification, or selective reporting of data with the intent to mislead or deceive is unethical, as is the theft of data or research results from others. The results of research should be recorded and maintained to allow for analysis and review. Following publication, the data should be retained for a reasonable period and made available upon request. Exceptions may be appropriate in certain circumstances to preserve privacy, to assure patent protection, or for similar reasons.

Authorship

All those who have made a significant contribution should be given chance to be cited as authors. Other individuals who have contributed to the work should be acknowledged. Articles should include a full list of the current institutional affiliations of all authors, both academic and corporate.

Competing interests

All authors, referees and editors must declare any conflicting or competing interests relating to a given article. Competing interests through their potential influence on behavior or content or perception may undermine the objectivity, integrity, or perceived value of publication.

Peer Review

We are committed to prompt evaluation and publication of fully accepted papers in Opto-Electronics Review’s publications. To maintain a high-quality publication, all submissions undergo a rigorous review process.

Characteristics of the peer review process are as follows:

• Simultaneous submissions of the same manuscript to different journals will not be tolerated.

• Manuscripts with contents outside the scope will not be considered for review.

• Opto-Electronics Review is a single-blind review journal.

• Papers will be refereed by at least 2 experts as suggested by the editorial board.

• In addition, Editors will have the option of seeking additional reviews when needed. Authors will be informed when Editors decide further review is required.

• All publication decisions are made by the journal’s Editor-in-Chief based on the referees’ reports. Authors of papers that are not accepted are notified promptly.

• All submitted manuscripts are treated as confidential documents. We expect reviewers to treat manuscripts as confidential material.

• Editors and reviewers involved in the review process should disclose conflicts of interest resulting from direct competitive, collaborative, or other relationships with any of the authors, and remove oneself from cases in which such conflicts preclude an objective evaluation. Privileged information or ideas that are obtained through peer review must not be used for competitive gain.

• A reviewer should be alert to potential ethical issues in the paper and should bring these to the attention of the editor, including any substantial similarity or overlap between the manuscript under consideration and any other published paper of which the reviewer has personal knowledge. Any statement, observation, derivation, or argument that had been previously reported should be accompanied by the relevant citation.

• Personal criticism is inappropriate.

Plagiarism

Reproducing text from other papers without properly crediting the source (plagiarism) or producing many papers with almost the same content by the same authors (self-plagiarism) is not acceptable. Submitting the same results to more than one journal concurrently is unethical. Exceptions are the review articles. Authors may not present results obtained by others as if they were their own. Authors should acknowledge the work of others used in their research and cite publications that have influenced the direction and course of their study.

Plagiarism is not tolerated. All manuscripts submitted to Opto-Electronics Review will be checked for plagiarism (copying text or results from other sources) and self-plagiarism (duplicating substantial parts of authors’ own published work without giving the appropriate references) using the CrossCheck database (iThenticate plagiarism checker).

Duplicate submission

Simultaneous submissions of the same manuscript to different journals will not be tolerated. The submitted article will be removed without consideration.

Corrections and retractions

All authors have an obligation to inform and cooperate with journal editors to provide prompt retractions or correction of errors in published works.

• The journal will issue retractions if:

• There is clear evidence that the findings are unreliable, either as a result of misconduct (e.g., data fabrication or honest error - miscalculation or experimental error);

• The findings have previously been published elsewhere without proper cross-referencing, permission or justification (i.e., cases of redundant publication);

• It constitutes plagiarism;

• It reports unethical research.

• The journal will issue errata, if:

• A small portion of an otherwise reliable publication proves to be misleading (especially because of honest error);

• The author list is incorrect.

Other forms of misconduct include failure to meet clear ethical and legal requirements such as misrepresentation of interests, breach of confidentiality, lack of informed consent and abuse of research subjects or materials. Misconduct also includes improper dealing with infringements, such as attempts to cover up misconduct and reprisals on whistleblowers.

The primary responsibility for handling research misconduct is in the hands of those who employ the researchers. If a possible misconduct is brought to our attention, we will seek advice from the referees and the Editorial Board. If there is the evidence, we will resolve the matter by appropriate corrections in the printed and online journal; by refusing to consider an author's future work and by contacting affected authors and editors of other journals.

Human and Animal Rights

If the work involves the use of human subjects, the author should ensure that the work described has been carried out in accordance with The Code of Ethics of the World Medical Association (Declaration of Helsinki) for experiments involving humans; Uniform Requirements for manuscripts submitted to Biomedical journals. Authors should include a statement in the manuscript that informed consent was obtained for experimentation with human subjects. The privacy rights of human subjects must always be observed.

All animal experiments should comply with the ARRIVE guidelines and should be carried out in accordance with the EU Directive 2010/63/EU for animal experiments, and the authors should clearly indicate in the manuscript that such guidelines have been followed.

This page uses 'cookies'. Learn more