In modern microelectronics progress has been made towards low power ultra large-scale integration (ULSI), and nano-structure devices such as single electron transistors and quantum dots. In this technology application of new materials, which includes high-κ dielectrics for the MOSFET transistors, with extraordinary purity and uniformity is required. Failure analysis and reliability investigations of such films very often requires highresolution local measurements of electrical surface parameters. This kind of experiments can be performed using conductive atomic force microscopy, which provides simultaneous measurement of surface topography and current ?owing through the investigated layer. In order to acquire reliable data, there was designed a precise measurement and control system, which included a low-noise current-to-voltage converter of picoampere resolution, a scanning stage with control electronics and a data acquisition system. In the paper we describe the architecture of the designed and applied experimental set-up. We also present results of simultaneous measurements of topography and current on gold and highly oriented pyrolytic graphite (HOPG).

Methane (CH4) sensitivity of zinc oxide (ZnO) thin film has been studied in the present work. The sensor element comprises

of a chemically fabricated ZnO semiconducting layer and a layer of palladium (Pd) as catalyst. The catalyst layer was formed on the surface of semiconducting ZnO following a wet chemical process from palladium chloride (PdCl2) solution. Fundamental features of a sensor element e.g. sensitivity, response time and recovery process has been studied. The effect of operating temperature on performance of the sensor material has been investigated and a choice of optimum temperature was made at around 200oC. The sensor element exhibited reasonable sensitivity of about 86% at this temperature in presence of 1 vol% methane (CH4) in air.

GZO/IZO semiconductor thin films were prepared on the ITO substrate via sol-gel spin coating method for using in the dyesensitized solar cells (DSSCs). For this purpose, GZO and IZO thin films were optimized by the percentage of doping gallium and indium in zinc oxide and were studied their electrical, optical and structural properties. After that, the layers with the best performance were selected for use in the DSSCs. The concentration of all solutions for spin coating processes was 0.1 M and zinc oxide has been doped with gallium and indium, with different doping percentages (0, 0.5, 1, 2 and 4 volume percentage). So, by studying the properties of the fabricated thin films, it was found the films with 0.5%GZO and 0.5%IZO have the best performance and hence, the optimized dual-layer (0.5% GZO/0.5% IZO (GIZO)) were prepared and studied their electrical and optical properties. The synthesized optimized dual-layer film was successfully used as the working electrode for dye-sensitized solar cells. The sample with 0.5%IZO shows the 9.1 mA/cm2 short-circuit current density, 0.52 V open circuit voltage, 63% fill factor and 2.98% efficiency.

Thin films of crystallized LaCoO3 were grown on Si substrate by Pulsed Laser Deposition at different temperatures (750°C, 850°C and 1000°C). The structural characterization of the LaCoO3 thin films was done by combining several techniques: Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM), Transmission Electron Microscopy (TEM) and Grazing Incidence X-Ray Diffraction (GIXRD). The thin films crystallized in the expected rhombohedral phase whatever the deposition temperature, with an increase of crystallite size from 70 nm at 750°C to 100 nm at 1000°C, and an average thickness of the thin films of less than 200 nm. At 850°C and 1000°C, the thin films are crack-free, and with a lower number of droplets than the film deposited at 750°C. The grains of LaCoO3 film deposited at 850°C are columnar, with a triangular termination. At 1000°C, an intermediate layer of La2Si2O7 was observed, indicating diffusion of Si into the deposited film.

The aim of this work was to produce a thin SnO2 film by a technique combining the sol-gel method and electrospinning from a solution based on polyvinylpyrrolidone and a tin chloride pentahydrate as a precursor. The spinning solution was subjected to an electrospinning process, and then the obtained nanofiber mats were calcined for 10 h at 500°C. Then, the scanning electron microscopy morphology analysis and chemical composition analysis by X-ray microanalysis of the manufactured thin film was performed. It was shown that an amorphous-crystalline layer formed by the SnO2 nanofiber network was obtained. Based on the UV-Vis spectrum, the width of the energy gap of the obtained layer was determined.

This work presents a theoretical study for the distribution of nanocomposite structure of plasmonic thin-film solar cells through the absorber layers. It can be reduced the material consumption and the cost of solar cell. Adding nanometallic fillers in the absorber layer has been improved optical, electrical characteristics and efficiency of traditional thin film solar cells (ITO /CdS/PbS/Al and SnO2/CdS/CdTe/Cu) models that using sub micro absorber layer. Also, this paper explains analysis of J-V, P-V and external quantum efficiency characteristics for nanocomposites thin film solar cell performance. Also, this paper presents the effect of increasing the concentration of nanofillers on the absorption, energy band gap and electron-hole generation rate of absorber layers and the effect of volume fraction on the energy conversion efficiency, fill factor, space charge region of the nanocomposites solar cells.

ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.

In this paper an analysis of the surface properties of (Ti,Pd,Eu)O_x thin films prepared by magnetron sputtering has been described. In particular, the results of composition and structure investigations were studied in relation to the surface state and optical properties. It was found that (Ti,Pd,Eu)O_x film was nanocrystalline and had a rutile structure. The average crystallites size was equal to 7.8 nm. Films were homogeneous and had densely packed grains. Investigation of the surface properties by XPS showed that titanium was present at 4+ state (in the TiO₂form), palladium occurred as PdO₂(also at 4+ state), while europium was in Eu₂O₃form (at 3+ state). In comparison with the unmodiffied TiO₂, the coating with Pd and Eu additives had a rather high transparency (approx. 47%) in the visible light range, its optical absorption edge was shifted towards into the longer wavelengths (from 345 nm to 452 nm), and the width of optical energy gap Egopt was nearly twice lower (1.82 eV). Besides, the resistivity of (Ti,Pd,Eu)O_x at room temperature was 1×10³ Wcm. In the case of the film as-deposited on Si substrate (p-type) the generation of photocurrent as a response to light beam excitation (λ_exc = 527 nm) was observed.

The paper presents the idea to improve the performance of thin film photovoltaic cells by a light capture enhancement through the introduction of down shifting energy converters. Luminescent down shifting layers convert high-energy photons (UV light) into low-energy ones (visible light), which are more efficient in a photovoltaic conversion. For this purpose, the application of a thin layer composed of zinc oxide (ZnO) nanoparticles deposited onto a thin film solar cell is proposed. The paper presents both experimental and theoretical results of this approach. Conducted investigations include an analysis of ZnO nanoparticle layers, deposited in two independent technology methods. The results showed that ZnO nanoparticles have a great potential of application as down converting layers and can be implemented to improve the efficiency of photovoltaic cells, especially in the field of thin film PV structures. The proposed new deposition method can potentially be used in some industrial photovoltaic applications.

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In₂S₃ thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.