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Opto-Electronics Review

Opto-Electronics Review

Description
Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:


  • Optical Design and Applications,
  • Image Processing (without AI Algorithm Optimisation)
  • Plasmonics, nanooptics, and metamaterials,
  • Optoelectronic Materials,
  • Micro-Opto-Electro-Mechanical Systems,
  • Infrared Physics and Technology,
  • Modelling of Optoelectronic Devices, Semiconductor Lasers

  • Technology and Fabrication of Optoelectronic Devices,
  • Photonic Crystals,
  • Laser Physics, Technology and Applications,
  • Optical Sensors and Applications,
  • Photovoltaics,
  • Biomedical Optics and Photonics

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Journal Metrics:
JCR Impact Factor 2023: 1.3
5 Year Impact Factor 2022: 2
SCImago Journal Rank (SJR) 2023: 0.267
Source Normalized Impact per Paper (SNIP) 2023: 0.525
CiteScore 2023: 1.9
Ministry of Education and Science 2021*: 100 points
* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN
ISSN 1896-3757
Publishers
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland


Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland


International Editorial Advisory Board


D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland


Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl


Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.


The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

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Content

Opto-Electronics Review | 2022 | 30 | 2

1 Review on the structured light properties: rotational features and singularities
Oleg V. Angelsky , Aleksandr Ya. Bekshaev , Igor I. Mokhun , Mikhail V. Vasnetsov , Claudia Yu. Zenkova , Steen G. Hanson , Jun Zheng
Opto-Electronics Review | 2022 | 30 | 2 | e140860 | DOI: 10.24425/opelre.2022.140860
Keywords: singularity spin and orbital angular momentum energy flow structured light optical vortices
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Abstract

The review exposes basic concepts and manifestations of the singular and structured light fields. The presentation is based on deep intrinsic relations between the singularities and the rotational phenomena in light; it involves essentially the dynamical aspects of light fields and their interactions with matter. Due to their topological nature, the singularities of each separate parameter (phase, polarization, energy flow, etc.) form coherent interrelated systems (singular networks), and the meaningful interconnections between the different singular networks are analysed. The main features of singular-light structures are introduced via generic examples of the optical vortex and circular vortex beams. The review describes approaches for generation and diagnostics of different singular networks and underlines the role of singularities in formation of optical field structures. The mechanical action of structured light fields on material objects is discussed on the base of the spin-orbital (canonical) decomposition of electromagnetic momentum, expressing the special roles of the spin (polarization) and spatial degrees of freedom. Experimental demonstrations spectacularly characterize the topological nature and the immanent rotational features of the light-field singularities. The review is based on the results obtained by its authors with a special attention to relevant works of other researchers.
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Authors and Affiliations

Oleg V. Angelsky
1 2
Aleksandr Ya. Bekshaev
3
Igor I. Mokhun
2
Mikhail V. Vasnetsov
4
Claudia Yu. Zenkova
1 2
Steen G. Hanson
5
Jun Zheng
1
  1. Taizhou Research Institute of Zhejiang University, Taizhou, China
  2. Chernivtsi National University, Chernivtsi, Ukraine
  3. Physics Research Institute, Odessa I. I. Mechnikov National University, Odessa, Ukraine
  4. Department of Optical Quantum Electronics, Institute of Physics of the NAS of Ukraine, Kyiv, Ukraine
  5. DTU Fotonik, Department of Photonics Engineering, DK-4000 Roskilde, Denmark
2 Indoor localization based on visible light communication and machine learning algorithms
Alzahraa M. Ghonim , Wessam M. Salama , Ashraf A. M. Khalaf , Hossam M. H. Shalaby
Opto-Electronics Review | 2022 | 30 | 2 | e140858 | DOI: 10.24425/opelre.2022.140858
Keywords: free-space optical communication visible light communication neural networks random forests machine learning
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Abstract

An indoor localization system is proposed based on visible light communications, received signal strength, and machine learning algorithms. To acquire an accurate localization system, first, a dataset is collected. The dataset is then used with various machine learning algorithms for training purpose. Several evaluation metrics are used to estimate the robustness of the proposed system. Specifically, authors’ evaluation parameters are based on training time, testing time, classification accuracy, area under curve, F1-score, precision, recall, logloss, and specificity. It turned out that the proposed system is featured with high accuracy. The authors are able to achieve 99.5% for area under curve, 99.4% for classification accuracy, precision, F1, and recall. The logloss and precision are 4% and 99.7%, respectively. Moreover, root mean square error is used as an additional performance evaluation averaged to 0.136 cm.
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Authors and Affiliations

Alzahraa M. Ghonim
1
Wessam M. Salama
2
Ashraf A. M. Khalaf
1
ORCID: ORCID
Hossam M. H. Shalaby
3 4
  1. Department of Electrical Engineering, Faculty of Engineering, Minia University, Minia 61111, Egypt
  2. Department of Basic Science, Faculty of Engineering, Pharos University, Alexandria, Egypt
  3. Electrical Engineering Department, Faculty of Engineering, Alexandria University, Alexandria 21544, Egypt
  4. Department of Electronics and Communications Engineering, Egypt-Japan University of Science and Technology (E-JUST), Alexandria 21934, Egypt
3 Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements
Krzysztof Achtenberg  , Janusz Mikołajczyk , Zbigniew Bielecki
Opto-Electronics Review | 2022 | 30 | 2 | e141126 | DOI: 10.24425/opelre.2022.141126
Keywords: cross-correlation IR detectors noise transimpedance amplifier InAs InAsSb
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Abstract

The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.
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Authors and Affiliations

Krzysztof Achtenberg 
1
ORCID: ORCID
Janusz Mikołajczyk
1
ORCID: ORCID
Zbigniew Bielecki
1
ORCID: ORCID
  1. Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
4 Design of external microtextures for efficient light outcoupling in OLEDs with different preferential orientation of emission dipoles
Milan Kovačič
Opto-Electronics Review | 2022 | 30 | 2 | e141542 | DOI: 10.24425/opelre.2022.141542
Keywords: organic light-emitting diode light outcoupling dipole orientation ray tracing optical modelling
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Abstract

External light outcoupling structures provide a cost-effective and highly efficient solution for light extraction in organic light-emitting diodes. Among them, different microtextures, mainly optimized for devices with isotopically oriented emission dipoles, have been proposed as an efficient light extraction solution. In the paper, the outcoupling for a preferential orientation of emission dipoles is studied for the case of a red bottom-emitting organic light-emitting diode. Optical simulations are used to analyse the preferential orientation of dipoles in combination with three different textures, namely hexagonal array of sine-textures, three-sided pyramids, and random pyramids. It is shown that while there are minimal differences between the optimized textures, the highest external quantum efficiency of 51% is predicted by using the three-sided pyramid texture. Further improvements, by employing highly oriented dipole sources, are examined. In this case, the results show that the top outcoupling efficiencies can be achieved with the same texture shape and size, regardless of the preferred orientation of the emission dipoles. Using an optimized three-sided pyramid in combination with ideally parallel oriented dipoles, an efficiency of 62% is achievable. A detailed analysis of the optical situation inside the glass substrate, dominating external light outcoupling, is presented. Depicted results and their analysis offer a simplified further research and development of external light extraction for organic light-emitting devices with highly oriented dipole emission sources.
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Authors and Affiliations

Milan Kovačič
1
ORCID: ORCID
  1. Faculty of Electrical Engineering, University of Ljubljana, Tržaška cesta 25, 1000 Ljubljana, Slovenia
5 The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
Tetiana Manyk , Jarosław Rutkowski , Paweł Madejczyk , Waldemar Gawron , Piotr Martyniuk
Opto-Electronics Review | 2022 | 30 | 2 | e141596 | DOI: 10.24425/opelre.2022.141596
Keywords: HgCdTe MWIR detectors dark current I-V characteristics recombination
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Abstract

A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
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Authors and Affiliations

Tetiana Manyk
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID
Paweł Madejczyk
1
ORCID: ORCID
Waldemar Gawron
1 2
ORCID: ORCID
Piotr Martyniuk
1
ORCID: ORCID
  1. Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
  2. VIGO System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland
6 Electronic structure, stability, and strength of Cu–NiAl alloys: Experiment and DFT investigation
Zakaryaa Zarhri
Opto-Electronics Review | 2022 | 30 | 2 | e141707 | DOI: 10.24425/opelre.2022.141707
Keywords: mechanical properties electronic structure DFT study Cu-doped nickel aluminide formation energy
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Abstract

In this study, the copper doping effect on the NiAl structural stability, strength, and electronic structure was investigated. The samples were prepared using induction melting at 2073 K. This material presents good mechanical and physical properties such as high-temperature strength, fatigue or impact, and corrosion resistance which meet technical requirements of many applications. The microstructure of the Cu-doped nickel aluminide was studied using a metallurgical microscope and its lattice parameter was also studied and characterized using an X-ray diffractometer for different concentrations of Cu. The lattice constant of the existing phases was calculated, and it was found that the lattice distortion and gamma prime phase energy have high values allowing the increase of the entropy term of the alloy and subsequently increasing its hardness. From the ab-initio calculation, it was determined that the Cu atoms have the Al sites as a preferred site and prefer to bond with Ni atoms which leads to the improvement of the material hardness. Ab-initio density functional theory was applied to study the formation energy that revealed increasing with Cu amount.
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Authors and Affiliations

Zakaryaa Zarhri
1
ORCID: ORCID
  1. CONACYT-Tecnológico Nacional de México/I.T. Chetumal; Insurgentes 330, C.P. 77013, Chetumal, Quintana Roo, Mexico
7 Corrigendum to "Van der Waals materials for HOT infrared detectors: A review"
Antoni Rogalski
Opto-Electronics Review | 2022 | 30 | 2 | e141441 | DOI: 10.24425/opelre.2022.141441
Keywords: HgCdTe photodiodes transition metal dichalcogenides photodetectors high operating temperature infrared detectors 2D material photodetectors
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Abstract


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Authors and Affiliations

Antoni Rogalski
1
ORCID: ORCID
  1. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

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