Applied sciences

Opto-Electronics Review

Description

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing (without AI Algorithm Optimisation)
Plasmonics, nanooptics, and metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

Submit your article

Journal Metrics:

JCR Impact Factor 2023:	1.3
5 Year Impact Factor 2022:	2
SCImago Journal Rank (SJR) 2023:	0.267
Source Normalized Impact per Paper (SNIP) 2023:	0.525
CiteScore 2023:	1.9
Ministry of Education and Science 2021*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Publishers

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

Volumes
Instructions for authors
Additional info

Select number

2024
- 32
  - 4 (in progress)
  - 3
  - 2
  - 1
2023
2022
2021
2020
2019
2018
2017
2016
2015

Content

Opto-Electronics Review | 2024 | 32 | 4

1 Why FETs detect a THz signal at a frequency far beyond their amplifying capabilities

Jacek Marczewski , Michał Zaborowski , Daniel Tomaszewski , Przemysław Zagrajek , Norbert Pałka

Opto-Electronics Review | 2024 | 32 | 4 | e151989 | DOI: 10.24425/opelre.2024.151989

Keywords: terahertz detection field-effect transistors Dyakonov-Shur theory resistive mixing surface plasmons

Download PDF Download RIS Download Bibtex

Abstract

Field-effect transistors (FETs) are efficient detectors of THz radiation. Despite over three decades of research, controversy still exists regarding the detection mechanism. The article attempts to solve this problem systemically. Existing approaches to modeling THz detection are critically reviewed, including plasmonic, resistive mixing, hot carrier and thermal models. Limitations and inconsistencies of the first two approaches, along with some classical physics principles and experiments conducted, were identified. These include the facts that some models were formulated independently of material relaxation time constraints, and the plasmonic approach does not take into account the conditions for the formation of surface plasmon-polarons and does not describe the case of p-type devices (hole plasmons have never been experimentally recorded). Relevant measurements and theoretical considerations illustrate the inadequacy of these models. As a result of this analysis, thermoelectric models are expected to explain THz sensing by FETs.

Go to article

Authors and Affiliations

Jacek Marczewski

e-mail:

ORCID:

Michał Zaborowski

e-mail:

ORCID:

Daniel Tomaszewski

e-mail:

ORCID:

Przemysław Zagrajek

e-mail:

ORCID:

Norbert Pałka

e-mail:

ORCID:

Institute of Microelectronics and Photonics, Lukasiewicz Research Center, al. Lotników 32/46, 02-668 Warsaw, Poland
Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

2 Analysis of irradiation in OptiTouch system with optical detection

Maciej Zajkowski , Piotr Kardasz , Łukasz Budzyński , Grzegorz Masłowski

Opto-Electronics Review | 2024 | 32 | 4 | e151990 | DOI: 10.24425/opelre.2024.151990

Keywords: optical detection irradiation optical guide display

Download PDF Download RIS Download Bibtex

Abstract

As part of the research and development project, a multi-touch multimedia system was implemented, working exclusively on the basis of optical technologies. The model of device with a diagonal of 42” was developed and made with 4K TV image technology and simultaneous detection in near infrared. The control of individual system modules was carried out on RaspberryPi microcomputers without typical operating system. The functionality of a conventional large-format display with unlimited multi-touch, QR code scanner, and a document scanner has been achieved in one housing. Luminance distribution tests were carried out in accordance with ANSI requirements and infrared radiation for detection work.

Go to article

Authors and Affiliations

Maciej Zajkowski

e-mail:

ORCID:

Piotr Kardasz

e-mail:

ORCID:

Łukasz Budzyński

e-mail:

ORCID:

Grzegorz Masłowski

e-mail:

ORCID:

Faculty of Electrical Engineering, Department of Photonics, Electronic and Lighting Technology, Bialystok University of Technology, ul. Wiejska 45, 15-351 Białystok, Poland
Faculty of Electrical and Computer Engineering, Department of Electrical and Computer Engineering Fundamentals, Rzeszow University of Technology, al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland

3 Analysis of the impact of post-process modifications on the properties of TiO₂ thin films with high-temperature stable anatase phase deposited by the electron beam evaporation method

Agata Obstarczyk , Ewa Mańkowska , Wiktoria Weichbrodt , Paulina Kapuścik , Wojciech Kijaszek , Michał Mazur

Opto-Electronics Review | 2024 | 32 | 4 | e151991 | DOI: 10.24425/opelre.2024.151991

Keywords: post-process annealing electron beam evaporation TiO2 coating high-temperature stable anatase

Download PDF Download RIS Download Bibtex

Abstract

The paper describes the structural, optical, tribological, and mechanical properties of as‑prepared and annealed titanium dioxide (TiO₂) coatings. TiO₂ films were deposited by the electron beam evaporation (EBE) and additionally annealed at a temperature up to 800 °C using a tubular furnace. X-ray diffraction (XRD) analysis identified the amorphous phase of coatings as-prepared and annealed at 200 °C. The phase transition to anatase occurred at 400 °C, while annealing at 600 °C and 800 °C did not induce a phase transition to the rutile phase. The crystallite size increased with an annealing up to 40.4 nm at 800 °C. Raman spectroscopy confirmed the anatase phase in thin films annealed at 400 °C and above. A scanning electron microscope (SEM) images revealed surface morphology and grain structure changes after post-process high-temperature annealing. The optical transmission measurements showed a redshift in the fundamental absorption edge with increasing annealing temperature, accompanied by a decreased transparency level. The value of an optical band gap energy (E_g^opt) decreased to 2.77 eV for films annealed at 800 °C. Tribological tests revealed reduced scratch resistance with higher annealing temperatures, which was attributed to increased surface roughness and coating removal. Nanoindentation measurements showed a decrease in hardness with annealing temperature, attributed to changes in crystallite size and surface morphology. This comprehensive analysis of TiO₂ thin-film coatings showed that the post-process annealing should be carefully controlled for films used in optoelectronic applications.

Go to article

Authors and Affiliations

Agata Obstarczyk

e-mail:

ORCID:

Ewa Mańkowska

e-mail:

ORCID:

Wiktoria Weichbrodt

e-mail:

ORCID:

Paulina Kapuścik

e-mail:

ORCID:

Wojciech Kijaszek

e-mail:

ORCID:

Michał Mazur

e-mail:

ORCID:

Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science & Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

4 Magnetron sputtered silicon thin films for solar cell applications

Marek Szindler , Magdalena M. Szindler , Krzysztof Lukaszkowicz , Krzysztof Matus , Paweł Nuckowski

Opto-Electronics Review | 2024 | 32 | 4 | e151992 | DOI: 10.24425/opelre.2024.151992

Keywords: surface engineering thin films magnetron sputtering silicon solar cells

Download PDF Download RIS Download Bibtex

Abstract

One of the important directions of research in photovoltaics is the development of new thin-film technology, which can replace the currently used, more expensive bulk silicon technology. The article discusses the findings from research focused on optimizing the parameters for the deposition of silicon thin films with P-type electrical conductivity for applications in photovoltaics. The growth rate was determined depending on the change in substrate temperature using reflectometry and the influence of deposition time on optical properties was determined using UV/VIS spectroscopy. Photovoltaic structures were made on substrates with an ITO layer and their electrical parameters were measured. The authors applied the magnetron sputtering method to deposit the layers, selecting it over the commercially used the chemical vapor deposition (CVD) method. This replacement could alleviate the necessity for high temperatures and broaden the potential applications of thin-film solar cells.

Go to article

Authors and Affiliations

Marek Szindler

e-mail:

ORCID:

Magdalena M. Szindler

e-mail:

ORCID:

Krzysztof Lukaszkowicz

e-mail:

ORCID:

Krzysztof Matus

e-mail:

ORCID:

Paweł Nuckowski

Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, ul. Towarowa 7, 44-100 Gliwice, Poland
Department of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland
Materials Research Laboratory, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

5 Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors

Dawid Jarosz , Ewa Bobko , Małgorzata Trzyna-Sowa , Ewa Przeździecka , Marcin Stachowicz , Marta Ruszała , Piotr Krzemiński , Anna Juś , Kinga Maś , Renata Wojnarowska-Nowak , Oskar Nowak , Daria Gudyka , Brajan Tabor , Michał Marchewka

Opto-Electronics Review | 2024 | 32 | 4 | e152620 | DOI: 10.24425/opelre.2024.152620

Keywords: gallium arsenide gallium antimonide molecular beam epitaxy heteroepitaxy

Download PDF Download RIS Download Bibtex

Abstract

The aim of this work was to improve the quality of the GaSb buffer layers on GaAs substrates using the molecular beam epitaxy (MBE) technology. The high quality of the GaSb buffer layers is one of the most important elements enabling the synthesis of good quality of type II superlattices (T2SL) structures for infrared applications. The main challenges in this regard are: compensation of the difference in lattice constants between GaAs and GaSb and obtaining the highest achievable surface quality of the final GaSb layer. In the literature, many authors describe different techniques to obtain the best quality of a GaSb buffer layer. In this work, we present the results of HRXRD, AFM, TOF-SIMS, SEM, and Nomarski optical microscope measurements obtained for 2 μm thick GaSb buffer layers. The GaSb layers are made according to different techniques and these results are compared with a GaSb buffer construction technique according to our own technology. During the processes, we also obtained an unintentional structure of one of the buffer layers, which allowed us to obtain very good results in terms of surface structure and crystallographic quality where FWHM in ω_RC scan was equal to 138 arcsec and RMS 0.20 nm proving that there is still a lot of work to be done in this area.

Go to article

Authors and Affiliations

Dawid Jarosz

e-mail:

ORCID:

Ewa Bobko

e-mail:

ORCID:

Małgorzata Trzyna-Sowa

e-mail:

ORCID:

Ewa Przeździecka

e-mail:

ORCID:

Marcin Stachowicz

e-mail:

ORCID:

Marta Ruszała

e-mail:

ORCID:

Piotr Krzemiński

e-mail:

ORCID:

Anna Juś

e-mail:

ORCID:

Kinga Maś

e-mail:

ORCID:

Renata Wojnarowska-Nowak

e-mail:

ORCID:

Oskar Nowak

Daria Gudyka

Brajan Tabor

Michał Marchewka

e-mail:

ORCID:

Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

6 Direct characterisation of AM-to-PM phenomena in fast Si and InGaAs photodiodes

Grzegorz Budzyn , Jędrzej Barański

Opto-Electronics Review | 2024 | 32 | 4 | e152678 | DOI: 10.24425/opelre.2024.152678

Keywords: photodetector phase noise laser nonlinearities

Download PDF Download RIS Download Bibtex

Abstract

The direct measurement method of AM-to-PM phenomena in fast silicon and InGaAs photodiodes is described. The setup is simple, relatively inexpensive and allows fast and precise measurements not only in a laboratory environment. During sample tests, the authors have found that the influence of bias voltage on the phase shift of an optical signal conversion is significant. The reported effect together with the influence of modulation depth on phase shift (AM-to-PM conversion) has a negative impact on an optical signal reception especially in coherent applications. The authors show that, with our proposed setups, it is possible to find optimal bias voltage and optimal optical power in order to reduce electrical phase noise of the photodetector.

Go to article

Authors and Affiliations

Grzegorz Budzyn

e-mail:

ORCID:

Jędrzej Barański

1 2

e-mail:

ORCID:

Wroclaw University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Lasertex Co. Sp. z o.o., ul. Swojczycka 26, 51-501 Wroclaw, Poland

7 Glass-ceramic materials: influence of fluoride nanocrystals on emission properties of lanthanide ions

Joanna Śmiarowska , Natalia Pawlik , Joanna Pisarska , Wojciech A. Pisarski

Opto-Electronics Review | 2024 | 32 | 4 | e152680 | DOI: 10.24425/opelre.2024.152680

Keywords: glass-ceramic materials lanthanide ions optical properties visible emission

Download PDF Download RIS Download Bibtex

Abstract

In this work, the oxyfluoride glass-ceramic materials containing LaF₃ nanocrystals, prepared by using the sol-gel method, were described. The influence of fluoride nanocrystals on the photoluminescence properties of selected lanthanide ions was determined. The experimental results obtained for nano-glass-ceramics were compared to the precursor xerogels. Those Ln³⁺-doped sol-gel materials with dispersed LaF₃ nanocrystals exhibit several visible emission bands. It was observed that heat-treatment process caused the elongation of the lifetimes of the ⁵D₀ state from τ = 0.22 ms to τ₁= 0.79 ms, τ₂= 9.76 ms (for Eu³⁺-doped materials) and of the ⁴F_9/2 state from τ = 0.027 ms to τ₁= 0.034 ms, τ₂= 1.731 ms (for Dy³⁺‑doped materials). The performed studies clearly revealed that luminescence behaviour also depends on an activator concentration and a distribution of energy levels of lanthanide ions.

Go to article

Authors and Affiliations

Joanna Śmiarowska

e-mail:

ORCID:

Natalia Pawlik

e-mail:

ORCID:

Joanna Pisarska

e-mail:

ORCID:

Wojciech A. Pisarski

Institute of Chemistry, University of Silesia, ul. Szkolna 9, 40‐007 Katowice, Poland

8 Impact of DSSCs structure modification sensitized with phenothiazine derivative on photovoltaic performance

Paweł Gnida , Aneta Slodek , Mieczysław Łapkowski , Ewa Schab-Balcerzak

Opto-Electronics Review | 2024 | 32 | 4 | e152679 | DOI: 10.24425/opelre.2024.152679

Keywords: dye-sensitized solar cell N719 organic dyes phenothiazine derivatives co-sensitization

Download PDF Download RIS Download Bibtex

Abstract

This paper presents the results of a study on the modification of dye-sensitized solar cells (DSSCs) using various phenothiazine derivatives, N719, and a mixture of these. The influence of the solvent used to prepare the dye solution, as well as the use of a TiO₂ blocking layer, the addition of a co-adsorbent, or a mixture of dyes with N719 are presented. Characterisation of photoanodes was carried out to determine the UV-Vis absorption properties, morphology, and photovoltaic parameters of the fabricated solar cells. The use of different solvents for the preparation of dye solutions resulted in DSSCs efficiencies in the range of 1.55–7.26%. The most advantageous was using an ACN:t-BuOH mixture, which provided the best efficiency. The application of further modifications in the form of the addition of chenodeoxycholic acid (CDCA), a blocking layer, and the use of a co-sensitization process resulted in an increase in the final efficiency to a value of 8.50%.

Go to article

Authors and Affiliations

Paweł Gnida

e-mail:

ORCID:

Aneta Slodek

e-mail:

ORCID:

Mieczysław Łapkowski

1 3 4

e-mail:

ORCID:

Ewa Schab-Balcerzak

1 2

e-mail:

ORCID:

Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowskiej Str., 41-819 Zabrze, Poland
Institute of Chemistry, University of Silesia, 9 Szkolna Str., 40-006 Katowice, Poland
Faculty of Chemistry, Silesian University of Technology, 9 M. Strzody Str, 44-100 Gliwice, Poland
Centre for Organic and Nanohybrid Electronics, Silesian University of Technology, 22b Konarskiego Str., 44-100 Gliwice, Poland

9 Zinc-selective light diffuser for enhanced efficiency and reduced degradation in photovoltaic modules

Olgierd Jeremiasz , Grażyna Kulesza-Matlak , Piotr Sobik , Paweł Nowak , Klaudiusz Grübel , Kazimierz Drabczyk

Opto-Electronics Review | 2024 | 32 | 4 | e152683 | DOI: 10.24425/opelre.2024.152683

Keywords: PV module laser technologies light diffuser

Download PDF Download RIS Download Bibtex

Abstract

This article introduces a zinc metal layer structure integrated into a standard photovoltaic (PV) module, potentially serving a double purpose: as a light reflecting and re-directing diffuser, increasing the PV module overall efficiency, offering anodic protection of Ag/Sn interface against corrosion within the PV module structure. The ethylene-vinyl acetate (EVA) cross-linking degree and peel force measurements were carried out to check the quality of the encapsulation process for the modified modules. Finally, the electrical series resistance of PV modules was measured showing that the modified PV module almost maintained its initial series resistance after exposure to damp-heat conditions of 85 °C, 85% relative humidity for 1000 h, while the unmodified PV module increased its resistance by 5% under the same conditions.

Go to article

Authors and Affiliations

Olgierd Jeremiasz

1 2

e-mail:

ORCID:

Grażyna Kulesza-Matlak

e-mail:

ORCID:

Piotr Sobik

e-mail:

ORCID:

Paweł Nowak

e-mail:

ORCID:

Klaudiusz Grübel

Kazimierz Drabczyk

1 3

e-mail:

ORCID:

Institute of Metallurgy and Materials Science, Polish Academy of Sciences, ul. Reymonta 25, 30-059 Kraków, Poland
Helioenergia sp. z o. o., ul. Rybnicka 68, 44-238 Czerwionka-Leszczyny, Poland
University of Bielsko-Biala, ul. Willowa 2, 43-309 Bielsko-Biała, Poland

10 Study of the optical rotatory of potassium titanyl phosphate using the advanced dual-wavelength polarimetric method

Mykola Shopa , Nazar Ftomyn , Yaroslav Shopa

Opto-Electronics Review | 2024 | 32 | 4 | e152682 | DOI: 10.24425/opelre.2024.152682

Keywords: polarimetry dual-wavelength crystal optics birefringence optical activity

Download PDF Download RIS Download Bibtex

Abstract

A dual-wavelength high-accuracy universal polarimeter was applied to the circular birefringence and optical activity measurement in potassium titanyl phosphate (KTP) nonlinear crystal. The experimental setup used two single-mode He-Ne lasers with close wavelengths of 594 and 633 nm as light sources. Measurement has been carried out for two crystal settings in directions of a 45-degree relative angle to the [100] and [010] crystallographic axes. Multiple light reflections inside the crystal sample were considered when processing the results of the polarimetric measurements. The results have been analysed using the optical transmission function for the polariser-sample-analyser system, and 2D intensity contour maps made it possible to determine the phase parameters, systematic errors, and eigenwaves ellipticity. It was found that the gyration tensor component of the KTP crystal is equal to g₁₂ = 1.4 ⋅ 10⁻⁵ which in terms of optical rotatory power corresponds to the very small magnitude of the rotation value of 2.3 deg/mm.

Go to article

Authors and Affiliations

Mykola Shopa

e-mail:

ORCID:

Nazar Ftomyn

e-mail:

ORCID:

Yaroslav Shopa

e-mail:

ORCID:

Department of Atomic, Molecular and Optical Physics, Gdańsk University of Technology, ul. Narutowicza 11/12, Gdańsk 80-233, Poland
Faculty of Physics, Ivan Franko National University of Lviv, Kyrylo & Mephodiy 8, Lviv 79005, Ukraine
Faculty of Mathematics and Natural Sciences, Cardinal Stefan Wyszynski University in Warsaw, ul. Wóycickiego 1/3, Warsaw 01-938, Poland

11 Self-noise reduction in a FOG-based rotational seismometer confirmed by Allan variance analysis

Piotr Zając , Piotr Amrozik , Rafał Kiełbik , Cezary Maj , Michał Szermer , Łukasz Starzak , Bartosz Pękosławski , Grzegorz Jabłoński , Wojciech Tylman , Anna T. Kurzych , Leszek R. Jaroszewicz

Opto-Electronics Review | 2024 | 32 | 4 | e152766 | DOI: 10.24425/opelre.2024.152766

Keywords: fibre-optic rotational seismometer fibre-optic gyroscope Allan variance noise angle random walk bias instability

Download PDF Download RIS Download Bibtex

Abstract

Reducing noise in fibre-optic gyroscope (FOG)-based rotational seismometers is crucial in guaranteeing their applicability as future high-precision sensors. This paper presents a practical approach to noise analysis of a designed and manufactured FOG-based three-axis rotational seismometer. The performed measurements show that proper identification of noise sources and subsequent changes to the device’s configuration which addressed these noise issues, visibly improved the Allan deviation plot of the device. In particular, angle random walk was reduced from 100–200 to around 35 nrad/s/√Hz and bias instability – from several dozens down to single nrad/s. These improvements were achieved only by elimination or mitigation of the impact of all noise sources, without changing any optoelectronic components of the constructed device and without applying any additional post-processing methods.

Go to article

Authors and Affiliations

Piotr Zając

e-mail:

ORCID:

Piotr Amrozik

e-mail:

ORCID:

Rafał Kiełbik

e-mail:

ORCID:

Cezary Maj

e-mail:

ORCID:

Michał Szermer

e-mail:

ORCID:

Łukasz Starzak

e-mail:

ORCID:

Bartosz Pękosławski

e-mail:

ORCID:

Grzegorz Jabłoński

e-mail:

ORCID:

Wojciech Tylman

e-mail:

ORCID:

Anna T. Kurzych

2 3

e-mail:

ORCID:

Leszek R. Jaroszewicz

2 3

e-mail:

ORCID:

Department of Microelectronics and Computer Science, Lodz University of Technology, ul. Wolczanska 221, 93-005 Lodz, Poland
Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Elproma Elektronika Sp. z o.o., ul. Dunska 2A, 05-152 Czosnow, Poland

Instructions for authors

Guide for Authors

https://www.editorialsystem.com/opelre/journal/for_authors/

OPTO-ELECTRONICS REVIEW is an open access journal. This involves the payment of an article publishing charge (APC) by the authors, their institution or funding body. We make the article freely available immediately upon publication on PAS Jornals platform (https://journals.pan.pl/opelre)

As of July 1st, 2024, there are changes in the fees for open access publications in Opto-Electronics Review: 2000 PLN (500 EUR) - up to 8 pages of the journal format and mandatory over-length charges of 200 PLN (50 EUR) per page (see the above link with instructions for Authors for details)

Articles submitted by June 30th, 2024: existing fee: 1750 PLN (or 400 EUR)

Articles submitted from July 1st, 2024: new fee: 2000 PLN (or 500 EUR) - a flat fee per paper up to 8 pages of the journal format (each additional page will be charged an additional 200 PLN or 50 EUR).

Additional info

barwy Rzeczypospolitej Polskiej i wizerunek godła Rzeczypospolitej Polskiej

DOFINANSOWANO ZE ŚRODKÓW BUDŻETU PAŃSTWA
Rozwój czasopism naukowych
Nr projektu: RCN/SN/0652/2021/1
Dofinansowanie: 85 700 zł
Całkowita wartość: 85 700 zł
Data podpisania umowy: 6 grudnia 2022 r.
Celem projektu jest wsparcie działalności wydawniczej Opto-Electronics Review w zakresie poprawy widoczności czasopisma na arenie krajowej i międzynarodowej oraz podwyższenia jakości edytorskiej prezentowanych treści.

CO-FINANCED FROM THE STATE BUDGET
Development of scientific journals
Project number: RCN/SN/0652/2021/1
Funding: PLN 85,700
Total value: PLN 85,700
Date of signing the contract: December 6, 2022.
The project aims to support the publishing activities of Opto-Electronics Review to improve the journal's visibility in the national and international arena and increase the editorial quality of the presented content.

Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encouraged. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded.

Articles are published in OPELRE in the following categories:

-invited reviews presenting the current state of the knowledge,

-specialized topics at the forefront of optoelectronics and photonics and their applications,

-refereed research contributions reporting on original scientific or technological achievements,

-conference papers printed in normal issues as invited or contributed papers.

Authors of review papers are encouraged to write articles of relevance to a wide readership including both those established in this field of research and non-specialists working in related areas. Papers considered as “letters” are not published in OPELRE.

Opto-Electronics Review is published quarterly as a journal of the Association of Polish Electrical Engineers (SEP) and Polish Academy of Sciences (PAS) in cooperation with the Military University of Technology and under the auspices of the Polish Optoelectronics Committee of SEP.

Abstracting and Indexing:

Arianta

BazTech

EBSCO relevant databases

EBSCO Discovery Service

SCOPUS relevant databases

ProQuest relevant databases

Clarivate Analytics relevant databases

WangFang

additionally:

ProQuesta (Ex Libris, Ulrich, Summon)

Google Scholar

Policies and ethics:

The editors of the journal place particular emphasis on compliance with the following principles:

Ethical policy of Opto-Electronics Review

The ethical policy of Opto-Electronics Review follows the European Code of Conduct for Research Integrity and is also guided by the core practices and policies outlined by the Committee on Publication Ethics (COPE).

Authors must be honest in presenting their results and conclusions of their research. Research misconduct is harmful for knowledge.

Research results

Fabrication, falsification, or selective reporting of data with the intent to mislead or deceive is unethical, as is the theft of data or research results from others. The results of research should be recorded and maintained to allow for analysis and review. Following publication, the data should be retained for a reasonable period and made available upon request. Exceptions may be appropriate in certain circumstances to preserve privacy, to assure patent protection, or for similar reasons.

Authorship

All those who have made a significant contribution should be given chance to be cited as authors. Other individuals who have contributed to the work should be acknowledged. Articles should include a full list of the current institutional affiliations of all authors, both academic and corporate.

Competing interests

All authors, referees and editors must declare any conflicting or competing interests relating to a given article. Competing interests through their potential influence on behavior or content or perception may undermine the objectivity, integrity, or perceived value of publication.

Peer Review

We are committed to prompt evaluation and publication of fully accepted papers in Opto-Electronics Review’s publications. To maintain a high-quality publication, all submissions undergo a rigorous review process.

Characteristics of the peer review process are as follows:

• Simultaneous submissions of the same manuscript to different journals will not be tolerated.

• Manuscripts with contents outside the scope will not be considered for review.

• Opto-Electronics Review is a single-blind review journal.

• Papers will be refereed by at least 2 experts as suggested by the editorial board.

• In addition, Editors will have the option of seeking additional reviews when needed. Authors will be informed when Editors decide further review is required.

• All publication decisions are made by the journal’s Editor-in-Chief based on the referees’ reports. Authors of papers that are not accepted are notified promptly.

• All submitted manuscripts are treated as confidential documents. We expect reviewers to treat manuscripts as confidential material.

• Editors and reviewers involved in the review process should disclose conflicts of interest resulting from direct competitive, collaborative, or other relationships with any of the authors, and remove oneself from cases in which such conflicts preclude an objective evaluation. Privileged information or ideas that are obtained through peer review must not be used for competitive gain.

• A reviewer should be alert to potential ethical issues in the paper and should bring these to the attention of the editor, including any substantial similarity or overlap between the manuscript under consideration and any other published paper of which the reviewer has personal knowledge. Any statement, observation, derivation, or argument that had been previously reported should be accompanied by the relevant citation.

• Personal criticism is inappropriate.

Plagiarism

Reproducing text from other papers without properly crediting the source (plagiarism) or producing many papers with almost the same content by the same authors (self-plagiarism) is not acceptable. Submitting the same results to more than one journal concurrently is unethical. Exceptions are the review articles. Authors may not present results obtained by others as if they were their own. Authors should acknowledge the work of others used in their research and cite publications that have influenced the direction and course of their study.

Plagiarism is not tolerated. All manuscripts submitted to Opto-Electronics Review will be checked for plagiarism (copying text or results from other sources) and self-plagiarism (duplicating substantial parts of authors’ own published work without giving the appropriate references) using the CrossCheck database (iThenticate plagiarism checker).

Duplicate submission

Simultaneous submissions of the same manuscript to different journals will not be tolerated. The submitted article will be removed without consideration.

Corrections and retractions

All authors have an obligation to inform and cooperate with journal editors to provide prompt retractions or correction of errors in published works.

• The journal will issue retractions if:

• There is clear evidence that the findings are unreliable, either as a result of misconduct (e.g., data fabrication or honest error - miscalculation or experimental error);

• The findings have previously been published elsewhere without proper cross-referencing, permission or justification (i.e., cases of redundant publication);

• It constitutes plagiarism;

• It reports unethical research.

• The journal will issue errata, if:

• A small portion of an otherwise reliable publication proves to be misleading (especially because of honest error);

• The author list is incorrect.

Other forms of misconduct include failure to meet clear ethical and legal requirements such as misrepresentation of interests, breach of confidentiality, lack of informed consent and abuse of research subjects or materials. Misconduct also includes improper dealing with infringements, such as attempts to cover up misconduct and reprisals on whistleblowers.

The primary responsibility for handling research misconduct is in the hands of those who employ the researchers. If a possible misconduct is brought to our attention, we will seek advice from the referees and the Editorial Board. If there is the evidence, we will resolve the matter by appropriate corrections in the printed and online journal; by refusing to consider an author's future work and by contacting affected authors and editors of other journals.

Human and Animal Rights

If the work involves the use of human subjects, the author should ensure that the work described has been carried out in accordance with The Code of Ethics of the World Medical Association (Declaration of Helsinki) for experiments involving humans; Uniform Requirements for manuscripts submitted to Biomedical journals. Authors should include a statement in the manuscript that informed consent was obtained for experimentation with human subjects. The privacy rights of human subjects must always be observed.

All animal experiments should comply with the ARRIVE guidelines and should be carried out in accordance with the EU Directive 2010/63/EU for animal experiments, and the authors should clearly indicate in the manuscript that such guidelines have been followed.